FJN3314RTA
- Mfr.Part #
- FJN3314RTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- SMALL SIGNAL BIPOLAR TRANSISTOR,
- Stock
- 6,341
- In Stock :
- 6,341
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Weight :
- 240mg
- Transistor Application :
- SWITCHING
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 500μA, 10mA
- Continuous Collector Current :
- 100mA
- Current Rating :
- 100mA
- Base Part Number :
- FJN3314
- JESD-609 Code :
- e3
- Transition Frequency :
- 250MHz
- Max Collector Current :
- 100mA
- Max Breakdown Voltage :
- 50V
- Collector Emitter Voltage (VCEO) :
- 50V
- Published :
- 2013
- Terminal Position :
- BOTTOM
- Width :
- 4.19mm
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Pbfree Code :
- yes
- HTS Code :
- 8541.21.00.95
- Number of Pins :
- 3
- hFE Min :
- 68
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Collector Emitter Saturation Voltage :
- 300mV
- Max Power Dissipation :
- 300mW
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 10V
- Polarity :
- NPN
- Radiation Hardening :
- No
- Frequency - Transition :
- 250MHz
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Height :
- 5.33mm
- Length :
- 5.2mm
- Resistor - Base (R1) :
- 4.7 k Ω
- Max Operating Temperature :
- 150°C
- Resistor - Emitter Base (R2) :
- 47 k Ω
- Collector Emitter Breakdown Voltage :
- 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 68 @ 5mA 5V
- Collector Base Voltage (VCBO) :
- 50V
- RoHS Status :
- RoHS Compliant
- Power Dissipation :
- 300mW
- Additional Feature :
- BUILT IN BIAS RESISTOR RATIO IS 10
- Packaging :
- Tape and Box (TB)
- Transistor Type :
- NPN - Pre-Biased
- Min Operating Temperature :
- -55°C
- Voltage - Rated DC :
- 50V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin (Sn)
- Mount :
- Through Hole
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Factory Lead Time :
- 36 Weeks
- Datasheets
- FJN3314RTA

FJN3314RTA datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ON Semiconductor stock available at
FJN3314RTA Description
The ON Semiconductor FJN3314RTA is an NPN Epitaxial Silicon Transistor with Bias Resistor.
FJN3314RTA Features
-
100 mA Output Current Capability
-
Built-in Bias Resistor (R1=4.7KΩ, R2=47KΩ)
FJN3314RTA Applications
-
Digital Applications in Industrial Segments
-
Switching, Interface, and Driver Circuits
-
Inverters
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