FDS89141

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Mfr.Part #
FDS89141
Manufacturer
onsemi
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET 2N-CH 100V 3.5A 8SOIC
Stock
15,748
In Stock :
15,748

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Arrays
Height :
1.5mm
Length :
4mm
Continuous Drain Current (ID) :
3.5A
Element Configuration :
Dual
Packaging :
Tape and Reel (TR)
Fall Time (Typ) :
2.2 ns
Gate Charge (Qg) (Max) @ Vgs :
7.1nC @ 10V
Factory Lead Time :
11 Weeks
JESD-609 Code :
e3
Operating Temperature :
-55°C~150°C TJ
Number of Pins :
8
Power - Max :
1.6W
Transistor Application :
SWITCHING
Threshold Voltage :
3.1V
Number of Elements :
2
Vgs(th) (Max) @ Id :
4V @ 250µA
ECCN Code :
EAR99
Resistance :
62mOhm
Drain to Source Voltage (Vdss) :
100V
Turn On Delay Time :
5 ns
Series :
PowerTrench®
Mounting Type :
Surface Mount
Width :
5mm
Avalanche Energy Rating (Eas) :
37 mJ
Lead Free :
Lead Free
Terminal Finish :
Tin (Sn)
Turn-Off Delay Time :
9.8 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Weight :
187mg
Radiation Hardening :
No
Mount :
Surface Mount
RoHS Status :
ROHS3 Compliant
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Power Dissipation :
31W
Drain to Source Breakdown Voltage :
100V
REACH SVHC :
No SVHC
FET Type :
2 N-Channel (Dual)
Number of Terminations :
8
Rise Time :
1.4ns
Operating Mode :
ENHANCEMENT MODE
Transistor Element Material :
SILICON
Gate to Source Voltage (Vgs) :
20V
Published :
2010
Lifecycle Status :
ACTIVE (Last Updated: 6 days ago)
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Additional Feature :
ULTRA-LOW RESISTANCE
Input Capacitance (Ciss) (Max) @ Vds :
398pF @ 50V
Rds On (Max) @ Id, Vgs :
62m Ω @ 3.5A, 10V
Max Power Dissipation :
31W
FET Feature :
Logic Level Gate
Terminal Form :
Gull wing
Pbfree Code :
yes
Introducing Transistors - FETs, MOSFETs - Arrays onsemi FDS89141 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Pins:8, Mounting Type:Surface Mount, Number of Terminations:8, Package / Case:8-SOIC (0.154, 3.90mm Width), FDS89141 pinout, FDS89141 datasheet PDF, FDS89141 amp .Beyond Transistors - FETs, MOSFETs - Arrays onsemi FDS89141 ,we also offer SSM6N57NU,LF, DMN2004DMK-7, AO4629, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDS89141


FDS89141 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at

FDS89141   Description


 The N-channel MOSFET is produced using an advanced Power Tritch process optimized for RDS (conduction), switching performance and ruggedness.

 

FDS89141     Features

 

Shielded Gate MOSFET Technology

Max rDS(on) = 62 mΩ at VGS = 10 V, ID = 3.5 A

Max rDS(on) = 100 mΩ at VGS = 6 V, ID = 2.8 A

High Performance Trench Technology for Extremely Low rDS(on)

High Power and Current Handling Capability in a Widely Used Surface Mount Package

100% UIL Tested

RoHS Compliant

 

 FDS89141     Applications


This product is general usage and suitable for many different applications.

Synchronous Rectifier

Primary Switch for Bridge Topology

 





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