FDS89141

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Mode :

ENHANCEMENT MODE

Rise Time :

1.4ns

Fall Time (Typ) :

2.2 ns

Terminal Finish :

Tin (Sn)

Resistance :

62mOhm

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

Number of Terminations :

8

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

100V

Width :

5mm

Series :

PowerTrench®

FET Type :

2 N-Channel (Dual)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Published :

2010

Number of Elements :

2

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

5 ns

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

4V @ 250µA

Element Configuration :

Dual

FET Feature :

Logic Level Gate

Power Dissipation :

31W

Length :

4mm

Additional Feature :

ULTRA-LOW RESISTANCE

Transistor Application :

SWITCHING

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

11 Weeks

Continuous Drain Current (ID) :

3.5A

Turn-Off Delay Time :

9.8 ns

Height :

1.5mm

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Weight :

187mg

Gate Charge (Qg) (Max) @ Vgs :

7.1nC @ 10V

Avalanche Energy Rating (Eas) :

37 mJ

Number of Pins :

8

Threshold Voltage :

3.1V

Rds On (Max) @ Id, Vgs :

62m Ω @ 3.5A, 10V

Max Power Dissipation :

31W

Input Capacitance (Ciss) (Max) @ Vds :

398pF @ 50V

Transistor Element Material :

SILICON

Power - Max :

1.6W

Radiation Hardening :

No

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Breakdown Voltage :

100V

REACH SVHC :

No SVHC

Pbfree Code :

yes