FDS86140
- Mfr.Part #
- FDS86140
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 11.2A 8SOIC
- Stock
- 37,168
- In Stock :
- 37,168
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Turn On Delay Time :
- 13.7 ns
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 9 Weeks
- Input Capacitance (Ciss) (Max) @ Vds :
- 2580pF @ 50V
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Number of Terminations :
- 8
- Feedback Cap-Max (Crss) :
- 30 pF
- Current - Continuous Drain (Id) @ 25°C :
- 11.2A Ta
- Packaging :
- Tape and Reel (TR)
- Threshold Voltage :
- 2.7V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 5.6ns
- REACH SVHC :
- No SVHC
- Height :
- 1.5mm
- Nominal Vgs :
- 2.7 V
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Terminal Position :
- Dual
- Pbfree Code :
- yes
- Drain to Source Breakdown Voltage :
- 100V
- Length :
- 4mm
- Additional Feature :
- ULTRA-LOW RESISTANCE
- Continuous Drain Current (ID) :
- 11.2A
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Transistor Application :
- SWITCHING
- Weight :
- 130mg
- Terminal Form :
- Gull wing
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Turn-Off Delay Time :
- 23 ns
- Radiation Hardening :
- No
- JESD-609 Code :
- e4
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Width :
- 5mm
- ECCN Code :
- EAR99
- Fall Time (Typ) :
- 4.8 ns
- Gate to Source Voltage (Vgs) :
- 20V
- FET Type :
- N-Channel
- Vgs (Max) :
- ±20V
- Power Dissipation :
- 5W
- Gate Charge (Qg) (Max) @ Vgs :
- 41nC @ 10V
- Transistor Element Material :
- SILICON
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Series :
- PowerTrench®
- Rds On (Max) @ Id, Vgs :
- 9.8m Ω @ 11.2A, 10V
- Operating Mode :
- ENHANCEMENT MODE
- Published :
- 2011
- Power Dissipation-Max :
- 2.5W Ta 5W Tc
- Number of Pins :
- 8
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Datasheets
- FDS86140
FDS86140 Documents

N-Channel Tape & Reel (TR) 9.8m Ω @ 11.2A, 10V ±20V 2580pF @ 50V 41nC @ 10V 8-SOIC (0.154, 3.90mm Width)
FDS86140 Description
FDS86140 is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 100V. The operating temperature of FDS86140 is -55°C~150°C TJ and its maximum power dissipation is 5W. This N-Channel MOSFET is produced using an advanced Power Trench? process that has been optimized for rDS(on), switching performance, and ruggedness.
FDS86140 Features
-
Max rDS(on) = 9.8 m? at VGS = 10 V, ID = 11.2 A
-
Max rDS(on) = 16 m? at VGS = 6 V, ID = 9 A
-
High-performance trench technology for extremely low rDS(on)
-
High power and current handling capability in a widely used surface mount package
-
100% UIL Tested
-
RoHS Compliant
FDS86140 Applications
-
Distribution
-
DC/DC Converters
-
Off-line UPS
-
Distributed Power Architectures and VRMs
-
Primary Switch for 24V and 48V Systems
-
High Voltage Synchronous Rectifier
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