FDS86106

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

1.5mm

Gate Charge (Qg) (Max) @ Vgs :

4nC @ 10V

Number of Pins :

8

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Turn On Delay Time :

5 ns

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

208pF @ 50V

Vgs (Max) :

±20V

Terminal Position :

Dual

Turn-Off Delay Time :

8 ns

Package / Case :

8-SOIC (0.154, 3.90mm Width)

JESD-609 Code :

e4

Drain to Source Breakdown Voltage :

100V

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

105m Ω @ 3.4A, 10V

Feedback Cap-Max (Crss) :

3 pF

Current - Continuous Drain (Id) @ 25°C :

3.4A Ta

Pbfree Code :

yes

Rise Time :

10ns

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

5W Ta

Mounting Type :

Surface Mount

Published :

2008

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

4V @ 250µA

Series :

PowerTrench®

Weight :

130mg

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Length :

4mm

Nominal Vgs :

2.9 V

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Element Configuration :

Single

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

10 ns

Number of Terminations :

8

Transistor Element Material :

SILICON

Number of Elements :

1

FET Type :

N-Channel

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

3.4A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Lead Free :

Lead Free

Factory Lead Time :

9 Weeks

Threshold Voltage :

2.9V

Qualification Status :

Not Qualified

Width :

5mm

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Power Dissipation :

5W