FDS86141

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Threshold Voltage :

3.1V

Turn On Delay Time :

8.3 ns

Current - Continuous Drain (Id) @ 25°C :

7A Ta

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

Gull wing

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

7A

Power Dissipation :

5W

Height :

1.5mm

Input Capacitance (Ciss) (Max) @ Vds :

934pF @ 50V

Contact Plating :

Tin

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

100V

Terminal Position :

Dual

Drain-source On Resistance-Max :

0.023Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

3.2ns

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Factory Lead Time :

9 Weeks

Fall Time (Typ) :

3.2 ns

Number of Terminations :

8

Number of Pins :

8

Published :

2017

Length :

4mm

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Mount :

Surface Mount

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Width :

5mm

Radiation Hardening :

No

Nominal Vgs :

3.1 V

JESD-609 Code :

e4

Series :

PowerTrench®

FET Type :

N-Channel

Power Dissipation-Max :

2.5W Ta

Turn-Off Delay Time :

14.3 ns

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

23m Ω @ 7A, 10V

Drain Current-Max (Abs) (ID) :

7A

Lead Free :

Lead Free

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

16.5nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Weight :

130mg