FDS86240
- Mfr.Part #
- FDS86240
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 7.5A 8SOIC
- Stock
- 32,758
- In Stock :
- 32,758
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Factory Lead Time :
- 5 Weeks
- Number of Terminations :
- 8
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Drain to Source Breakdown Voltage :
- 150V
- Terminal Form :
- Gull wing
- Rise Time :
- 10ns
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Vgs (Max) :
- ±20V
- Series :
- PowerTrench®
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Published :
- 2010
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- FET Type :
- N-Channel
- Fall Time (Typ) :
- 10 ns
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 7.5A Ta
- Input Capacitance (Ciss) (Max) @ Vds :
- 2570pF @ 75V
- Lead Free :
- Lead Free
- Operating Mode :
- ENHANCEMENT MODE
- Weight :
- 130mg
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Continuous Drain Current (ID) :
- 7.5A
- Width :
- 5mm
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Power Dissipation :
- 5W
- Gate Charge (Qg) (Max) @ Vgs :
- 40nC @ 10V
- Pbfree Code :
- yes
- Power Dissipation-Max :
- 2.5W Ta 5W Tc
- Gate to Source Voltage (Vgs) :
- 20V
- Turn-Off Delay Time :
- 24 ns
- Height :
- 1.5mm
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -55°C~150°C TJ
- Radiation Hardening :
- No
- Threshold Voltage :
- 2.7V
- Turn On Delay Time :
- 14 ns
- Mount :
- Surface Mount
- Number of Pins :
- 8
- Length :
- 4mm
- JESD-609 Code :
- e4
- Rds On (Max) @ Id, Vgs :
- 19.8m Ω @ 7.5A, 10V
- Datasheets
- FDS86240
FDS86240 Documents

N-Channel Tape & Reel (TR) 19.8m Ω @ 7.5A, 10V ±20V 2570pF @ 75V 40nC @ 10V 8-SOIC (0.154, 3.90mm Width)
FDS86240 Description
The FDS86240 N-Channel MOSFET is made with a Power Trench? process that has been optimized for rDS(on), switching performance, and robustness. These FDS86240 are designed for low-voltage and battery-powered applications that require minimal in-line power loss and fast switching.
FDS86240 Features
-
100% UIL Tested
-
RoHS Compliant
-
Max rDS(on) = 19.8 mΩ at VGS = 10 V, ID = 7.5 A
-
Max rDS(on) = 26 mΩ at VGS = 6 V, ID = 6.4 A
-
High Performance Trench Technology for Extremely Low rDS(on)
-
High Power and Current Handling Capability in a Widely Used Surface Mount Package
FDS86240 Applications
-
Off-line UPS
-
DC/DC Converters
-
Distributed Power Architectures and VRMs
-
Primary Switch for 24V and 48V Systems
-
High Voltage Synchronous Rectifier
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