FDS8447

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Mfr.Part #
FDS8447
Manufacturer
onsemi
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET N-CH 40V 12.8A 8SOIC
Stock
645
In Stock :
645

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Height :
1.5mm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pbfree Code :
yes
Length :
5mm
Gate to Source Voltage (Vgs) :
20V
Contact Plating :
Tin
REACH SVHC :
No SVHC
Threshold Voltage :
1.8V
Power Dissipation-Max :
2.5W Ta
Current Rating :
12.8A
Number of Elements :
1
Vgs(th) (Max) @ Id :
3V @ 250µA
Terminal Form :
Gull wing
Width :
4mm
Turn-Off Delay Time :
27 ns
Input Capacitance (Ciss) (Max) @ Vds :
2600pF @ 20V
Voltage - Rated DC :
40V
Factory Lead Time :
12 Weeks
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Fall Time (Typ) :
7 ns
Lead Free :
Lead Free
Gate Charge (Qg) (Max) @ Vgs :
49nC @ 10V
ECCN Code :
EAR99
Turn On Delay Time :
11 ns
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Number of Pins :
8
Rise Time :
14ns
Element Configuration :
Single
Terminal Position :
Dual
Resistance :
10.5mOhm
JESD-609 Code :
e3
Power Dissipation :
2.5W
Drain to Source Breakdown Voltage :
40V
Continuous Drain Current (ID) :
12.8A
Rds On (Max) @ Id, Vgs :
10.5m Ω @ 12.8A, 10V
Mounting Type :
Surface Mount
Weight :
130mg
Number of Terminations :
8
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Transistor Element Material :
SILICON
Series :
PowerTrench®
Vgs (Max) :
±20V
Operating Mode :
ENHANCEMENT MODE
Mount :
Surface Mount
Packaging :
Tape and Reel (TR)
Current - Continuous Drain (Id) @ 25°C :
12.8A Ta
Operating Temperature :
-55°C~150°C TJ
Published :
2006
Pulsed Drain Current-Max (IDM) :
50A
RoHS Status :
ROHS3 Compliant
FET Type :
N-Channel
Radiation Hardening :
No
Datasheets
FDS8447
Introducing Transistors - FETs, MOSFETs - Single onsemi FDS8447 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:8, Mounting Type:Surface Mount, Number of Terminations:8, Package / Case:8-SOIC (0.154, 3.90mm Width), Operating Temperature:-55°C~150°C TJ, FDS8447 pinout, FDS8447 datasheet PDF, FDS8447 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDS8447 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDS8447


N-Channel Tape & Reel (TR) 10.5m Ω @ 12.8A, 10V ±20V 2600pF @ 20V 49nC @ 10V 8-SOIC (0.154, 3.90mm Width)

Description


A single N-channel MOSFET called the FDS8447 was created using the cutting-edge PowerTrench? method. It has been specifically designed to reduce the resistance in the ON-state while yet delivering excellent switching performance. An N-Channel MOSFET makes a current channel out of electrons. This makes it possible for electrons to pass swiftly and readily across the current when the MOSFET is turned on. Since of the unique properties of N-Channel MOSFETs, the P-Channel chip must be 2 to 3 times larger than the N-Channel chip because the mobility of the carriers is around 2 to 3 times higher for the same RDS(on) value. It is common practice to use MOSFET transistor N-Channels in high current applications because of this.



Features


  • Low gate charge

  • High performance Trench technology for extremely low RDS (ON)

  • High power and current handing capability

  • RoHS compliant

  • Max rDS(on)=10.5mΩ at VGS=10V, ID=12.8A

  • Max rDS(on)=12.3mΩ at VGS-4.5V, ID=11.4A



Applications


  • DC-DC conversion

  • Small motor control

  • Solar inverters

  • Automotive applications

  • Switch, buck and synchronous rectification


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