FDS8447
- Mfr.Part #
- FDS8447
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 12.8A 8SOIC
- Stock
- 645
- In Stock :
- 645
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Height :
- 1.5mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Length :
- 5mm
- Gate to Source Voltage (Vgs) :
- 20V
- Contact Plating :
- Tin
- REACH SVHC :
- No SVHC
- Threshold Voltage :
- 1.8V
- Power Dissipation-Max :
- 2.5W Ta
- Current Rating :
- 12.8A
- Number of Elements :
- 1
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Terminal Form :
- Gull wing
- Width :
- 4mm
- Turn-Off Delay Time :
- 27 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 2600pF @ 20V
- Voltage - Rated DC :
- 40V
- Factory Lead Time :
- 12 Weeks
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Fall Time (Typ) :
- 7 ns
- Lead Free :
- Lead Free
- Gate Charge (Qg) (Max) @ Vgs :
- 49nC @ 10V
- ECCN Code :
- EAR99
- Turn On Delay Time :
- 11 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Number of Pins :
- 8
- Rise Time :
- 14ns
- Element Configuration :
- Single
- Terminal Position :
- Dual
- Resistance :
- 10.5mOhm
- JESD-609 Code :
- e3
- Power Dissipation :
- 2.5W
- Drain to Source Breakdown Voltage :
- 40V
- Continuous Drain Current (ID) :
- 12.8A
- Rds On (Max) @ Id, Vgs :
- 10.5m Ω @ 12.8A, 10V
- Mounting Type :
- Surface Mount
- Weight :
- 130mg
- Number of Terminations :
- 8
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Transistor Element Material :
- SILICON
- Series :
- PowerTrench®
- Vgs (Max) :
- ±20V
- Operating Mode :
- ENHANCEMENT MODE
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Current - Continuous Drain (Id) @ 25°C :
- 12.8A Ta
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2006
- Pulsed Drain Current-Max (IDM) :
- 50A
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- N-Channel
- Radiation Hardening :
- No
- Datasheets
- FDS8447

N-Channel Tape & Reel (TR) 10.5m Ω @ 12.8A, 10V ±20V 2600pF @ 20V 49nC @ 10V 8-SOIC (0.154, 3.90mm Width)
Description
A single N-channel MOSFET called the FDS8447 was created using the cutting-edge PowerTrench? method. It has been specifically designed to reduce the resistance in the ON-state while yet delivering excellent switching performance. An N-Channel MOSFET makes a current channel out of electrons. This makes it possible for electrons to pass swiftly and readily across the current when the MOSFET is turned on. Since of the unique properties of N-Channel MOSFETs, the P-Channel chip must be 2 to 3 times larger than the N-Channel chip because the mobility of the carriers is around 2 to 3 times higher for the same RDS(on) value. It is common practice to use MOSFET transistor N-Channels in high current applications because of this.
Features
-
Low gate charge
-
High performance Trench technology for extremely low RDS (ON)
-
High power and current handing capability
-
RoHS compliant
-
Max rDS(on)=10.5mΩ at VGS=10V, ID=12.8A
-
Max rDS(on)=12.3mΩ at VGS-4.5V, ID=11.4A
Applications
-
DC-DC conversion
-
Small motor control
-
Solar inverters
-
Automotive applications
-
Switch, buck and synchronous rectification
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