FDS86242

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

10 ns

Turn-Off Delay Time :

13 ns

Terminal Position :

Dual

Turn On Delay Time :

7.9 ns

Weight :

130mg

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

JESD-609 Code :

e4

Drain to Source Breakdown Voltage :

150V

Operating Temperature :

-55°C~150°C TJ

Length :

4mm

Power Dissipation :

2.5W

Contact Plating :

Tin

Terminal Form :

Gull wing

Published :

2008

Continuous Drain Current (ID) :

4.1A

Gate to Source Voltage (Vgs) :

20V

Feedback Cap-Max (Crss) :

5 pF

Threshold Voltage :

2V

Factory Lead Time :

9 Weeks

Height :

1.75mm

Width :

5mm

Vgs (Max) :

±20V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Power Dissipation-Max :

2.5W Ta 5W Tc

Drain-source On Resistance-Max :

0.067Ohm

Rds On (Max) @ Id, Vgs :

67m Ω @ 4.1A, 10V

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Max Junction Temperature (Tj) :

150°C

Transistor Application :

SWITCHING

Number of Elements :

1

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Element Configuration :

Single

Pbfree Code :

yes

REACH SVHC :

No SVHC

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Number of Channels :

1

Number of Pins :

8

Current - Continuous Drain (Id) @ 25°C :

4.1A Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Rise Time :

10ns

Mounting Type :

Surface Mount

Nominal Vgs :

3.5 V

ECCN Code :

EAR99

Lead Free :

Lead Free

Series :

PowerTrench®

FET Type :

N-Channel

Number of Terminations :

8

Vgs(th) (Max) @ Id :

4V @ 250µA

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

760pF @ 75V