FDS86242
- Mfr.Part #
- FDS86242
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 4.1A 8SOIC
- Stock
- 4,779
- In Stock :
- 4,779
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- Width :
- 5mm
- Turn-Off Delay Time :
- 13 ns
- Transistor Application :
- SWITCHING
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 9 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Breakdown Voltage :
- 150V
- Turn On Delay Time :
- 7.9 ns
- Max Junction Temperature (Tj) :
- 150°C
- Fall Time (Typ) :
- 10 ns
- Nominal Vgs :
- 3.5 V
- Number of Channels :
- 1
- Contact Plating :
- Tin
- Feedback Cap-Max (Crss) :
- 5 pF
- Lead Free :
- Lead Free
- Gate Charge (Qg) (Max) @ Vgs :
- 13nC @ 10V
- Mounting Type :
- Surface Mount
- Threshold Voltage :
- 2V
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Gate to Source Voltage (Vgs) :
- 20V
- Continuous Drain Current (ID) :
- 4.1A
- Drain-source On Resistance-Max :
- 0.067Ohm
- REACH SVHC :
- No SVHC
- Packaging :
- Tape and Reel (TR)
- Weight :
- 130mg
- JESD-609 Code :
- e4
- Vgs (Max) :
- ±20V
- Published :
- 2008
- FET Type :
- N-Channel
- Radiation Hardening :
- No
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Power Dissipation-Max :
- 2.5W Ta 5W Tc
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Pbfree Code :
- yes
- Number of Terminations :
- 8
- Number of Pins :
- 8
- Rise Time :
- 10ns
- Rds On (Max) @ Id, Vgs :
- 67m Ω @ 4.1A, 10V
- Operating Mode :
- ENHANCEMENT MODE
- Mount :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Terminal Position :
- Dual
- Current - Continuous Drain (Id) @ 25°C :
- 4.1A Ta
- Input Capacitance (Ciss) (Max) @ Vds :
- 760pF @ 75V
- Series :
- PowerTrench®
- Length :
- 4mm
- Height :
- 1.75mm
- Power Dissipation :
- 2.5W
- Number of Elements :
- 1
- Datasheets
- FDS86242
FDS86242 Documents

N-Channel Tape & Reel (TR) 67m Ω @ 4.1A, 10V ±20V 760pF @ 75V 13nC @ 10V 8-SOIC (0.154, 3.90mm Width)
FDS86242 Description
This N-Channel MOSFET is produced using an advanced Power Trench? process that has been optimized for rDS(on), switching performance, and ruggedness.
FDS86242 Features
Max rDS(on) = 67 m|? at VGS = 10 V, ID = 4.1 A
Max rDS(on) = 98m|? at VGS = 6 V, ID = 3.3 A
High-performance trench technology for extremely low RDS(on)
High power and current handling capability in a widely used surface mount package
100% UIL Tested
RoHS Compliant
FDS86242 Applications
This product is general usage and suitable for many different applications.
DC/DC Converters
Off-line UPS
Distributed Power Architectures and VRMs
Primary Switch for 24V and 48V Systems
High Voltage Synchronous Rectifier
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Most of our products are shipped via FEDEX,DHL,UPS and SF EXPRESS...
Shipping CostShipping Cost starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).If customer have shipping account, we can make shipment under customer’s shipping account with freight collect directly.
The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose. You can track it by the tracking no.
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