FDPF7N60NZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Number of Elements :

1

Mounting Type :

Through Hole

Power Dissipation-Max :

33W Tc

Pulsed Drain Current-Max (IDM) :

26A

Gate to Source Voltage (Vgs) :

30V

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

730pF @ 25V

Resistance :

1.25Ohm

FET Type :

N-Channel

Width :

4.9mm

Factory Lead Time :

6 Weeks

Vgs(th) (Max) @ Id :

5V @ 250μA

Mount :

Through Hole

JEDEC-95 Code :

TO-220AB

ECCN Code :

EAR99

Series :

UniFET-II™

Power Dissipation :

33W

Case Connection :

Isolated

Continuous Drain Current (ID) :

6.5A

Pbfree Code :

yes

Published :

2013

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

6.5A Tc

Turn-Off Delay Time :

40 ns

Number of Pins :

3

Lead Free :

Lead Free

Turn On Delay Time :

17.5 ns

Transistor Application :

SWITCHING

Fall Time (Typ) :

60 ns

Rise Time :

70ns

Weight :

2.27g

Packaging :

Tube

Avalanche Energy Rating (Eas) :

275 mJ

Lifecycle Status :

ACTIVE (Last Updated: 19 hours ago)

Rds On (Max) @ Id, Vgs :

1.25 Ω @ 3.25A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin (Sn)

Radiation Hardening :

No

Length :

10.36mm

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Package / Case :

TO-220-3 Full Pack

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Height :

16.07mm

Vgs (Max) :

±30V

Number of Terminations :

3

Drain to Source Breakdown Voltage :

600V