FDPF680N10T
- Mfr.Part #
- FDPF680N10T
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 12A TO220F
- Stock
- 4,875
- In Stock :
- 4,875
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±20V
- Number of Elements :
- 1
- Packaging :
- Tube
- Drain-source On Resistance-Max :
- 0.068Ohm
- Mounting Type :
- Through Hole
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 68m Ω @ 6A, 10V
- Power Dissipation :
- 24W
- Radiation Hardening :
- No
- Drain to Source Breakdown Voltage :
- 100V
- Case Connection :
- Isolated
- Pulsed Drain Current-Max (IDM) :
- 48A
- Input Capacitance (Ciss) (Max) @ Vds :
- 1000pF @ 50V
- Gate to Source Voltage (Vgs) :
- 20V
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- Power Dissipation-Max :
- 24W Tc
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Published :
- 2013
- Package / Case :
- TO-220-3 Full Pack
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Terminal Finish :
- Tin (Sn)
- Continuous Drain Current (ID) :
- 12A
- Operating Temperature :
- -55°C~150°C TJ
- Fall Time (Typ) :
- 6 ns
- Turn On Delay Time :
- 13 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Mount :
- Through Hole
- Element Configuration :
- Single
- Rise Time :
- 19ns
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 13 Weeks
- JEDEC-95 Code :
- TO-220AB
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- JESD-609 Code :
- e3
- Turn-Off Delay Time :
- 18 ns
- Weight :
- 2.27g
- RoHS Status :
- ROHS3 Compliant
- Length :
- 10.36mm
- ECCN Code :
- EAR99
- Operating Mode :
- ENHANCEMENT MODE
- Width :
- 4.9mm
- Height :
- 16.07mm
- Series :
- PowerTrench®
- Number of Terminations :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 10V
- Avalanche Energy Rating (Eas) :
- 50.4 mJ
- Datasheets
- FDPF680N10T

N-Channel Tube 68m Ω @ 6A, 10V ±20V 1000pF @ 50V 17nC @ 10V TO-220-3 Full Pack
FDPF680N10T Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 50.4 mJ.A device's maximal input capacitance is 1000pF @ 50V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 12A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 100V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 18 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 48A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 13 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (10V).
FDPF680N10T Features
the avalanche energy rating (Eas) is 50.4 mJ
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 18 ns
based on its rated peak drain current 48A.
FDPF680N10T Applications
There are a lot of ON Semiconductor
FDPF680N10T applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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