FDPF5N50UT

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin (Sn)

Rise Time :

21ns

Vgs (Max) :

±30V

Reach Compliance Code :

not_compliant

JEDEC-95 Code :

TO-220AB

Drain-source On Resistance-Max :

2Ohm

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

2 Ω @ 2A, 10V

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

27 ns

Power Dissipation :

28W

Mounting Type :

Through Hole

Power Dissipation-Max :

28W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

4A

Weight :

2.27g

Gate to Source Voltage (Vgs) :

30V

Element Configuration :

Single

Number of Elements :

1

Height :

16.07mm

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

650pF @ 25V

Fall Time (Typ) :

20 ns

Turn On Delay Time :

14 ns

FET Type :

N-Channel

Length :

10.36mm

Factory Lead Time :

7 Weeks

Continuous Drain Current (ID) :

4A

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

ECCN Code :

EAR99

Number of Pins :

3

Series :

FRFET®

Package / Case :

TO-220-3 Full Pack

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

Case Connection :

Isolated

Pbfree Code :

yes

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Transistor Application :

SWITCHING

Width :

4.9mm

Qualification Status :

Not Qualified

Published :

2013

Drain to Source Breakdown Voltage :

500V

Vgs(th) (Max) @ Id :

5V @ 250μA

Transistor Element Material :

SILICON