FDPF5N50T

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

4.9mm

Turn On Delay Time :

13 ns

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Lead Free :

Lead Free

Mounting Type :

Through Hole

Drain Current-Max (Abs) (ID) :

5A

Number of Terminations :

3

Drain to Source Breakdown Voltage :

500V

Height :

16.07mm

Rise Time :

22ns

Length :

10.36mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

Number of Pins :

3

Packaging :

Tube

Turn-Off Delay Time :

28 ns

Transistor Element Material :

SILICON

Factory Lead Time :

7 Weeks

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Radiation Hardening :

No

JEDEC-95 Code :

TO-220AB

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

20 ns

Avalanche Energy Rating (Eas) :

225 mJ

Resistance :

1.4Ohm

Pulsed Drain Current-Max (IDM) :

20A

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Weight :

2.27g

Element Configuration :

Single

Series :

UniFET™

Transistor Application :

SWITCHING

Power Dissipation-Max :

28W Tc

Continuous Drain Current (ID) :

5A

Gate to Source Voltage (Vgs) :

30V

Vgs (Max) :

±30V

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

5V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Published :

2013

Mount :

Through Hole

Package / Case :

TO-220-3 Full Pack

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

640pF @ 25V

Case Connection :

Isolated

Power Dissipation :

28W

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 2.5A, 10V