FDPF5N50T

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

13 ns

Width :

4.9mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

Fall Time (Typ) :

20 ns

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Height :

16.07mm

Rise Time :

22ns

Number of Elements :

1

Mounting Type :

Through Hole

FET Type :

N-Channel

Power Dissipation :

28W

Drain Current-Max (Abs) (ID) :

5A

Element Configuration :

Single

Drain to Source Breakdown Voltage :

500V

Published :

2013

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

3

JESD-609 Code :

e3

Resistance :

1.4Ohm

Lead Free :

Lead Free

Series :

UniFET™

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

28 ns

ECCN Code :

EAR99

Power Dissipation-Max :

28W Tc

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 2.5A, 10V

Packaging :

Tube

Vgs (Max) :

±30V

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

Package / Case :

TO-220-3 Full Pack

Radiation Hardening :

No

Number of Pins :

3

Gate to Source Voltage (Vgs) :

30V

Factory Lead Time :

7 Weeks

Continuous Drain Current (ID) :

5A

Avalanche Energy Rating (Eas) :

225 mJ

Length :

10.36mm

Pbfree Code :

yes

JEDEC-95 Code :

TO-220AB

Pulsed Drain Current-Max (IDM) :

20A

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Vgs(th) (Max) @ Id :

5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

640pF @ 25V

Weight :

2.27g

Case Connection :

Isolated

Drive Voltage (Max Rds On,Min Rds On) :

10V