FDPF5N50NZU
- Mfr.Part #
- FDPF5N50NZU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 3.9A TO220F
- Stock
- 5,273
- In Stock :
- 5,273
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JEDEC-95 Code :
- TO-220AB
- Fall Time (Typ) :
- 22 ns
- Transistor Element Material :
- SILICON
- Turn-Off Delay Time :
- 31 ns
- Packaging :
- Tube
- Continuous Drain Current (ID) :
- 3.9A
- Mounting Type :
- Through Hole
- Drain-source On Resistance-Max :
- 2Ohm
- Number of Pins :
- 3
- Mount :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 485pF @ 25V
- Number of Elements :
- 1
- Terminal Finish :
- Tin
- Number of Terminations :
- 3
- Width :
- 4.7mm
- JESD-609 Code :
- e3
- Height :
- 15.87mm
- Factory Lead Time :
- 9 Weeks
- Case Connection :
- Isolated
- Operating Temperature :
- -55°C~150°C TJ
- Radiation Hardening :
- No
- Turn On Delay Time :
- 12 ns
- Rds On (Max) @ Id, Vgs :
- 2 Ω @ 1.95A, 10V
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Power Dissipation :
- 30W
- Length :
- 10.16mm
- Transistor Application :
- SWITCHING
- Weight :
- 2.27g
- Power Dissipation-Max :
- 30W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Mode :
- ENHANCEMENT MODE
- Pbfree Code :
- yes
- Vgs (Max) :
- ±25V
- Drain to Source Breakdown Voltage :
- 500V
- Rise Time :
- 19ns
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- Gate Charge (Qg) (Max) @ Vgs :
- 12nC @ 10V
- Series :
- UniFET-II™
- Gate to Source Voltage (Vgs) :
- 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 3.9A Tc
- Package / Case :
- TO-220-3 Full Pack
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- FDPF5N50NZU

N-Channel Tube 2 Ω @ 1.95A, 10V ±25V 485pF @ 25V 12nC @ 10V TO-220-3 Full Pack
FDPF5N50NZU Overview
A device's maximal input capacitance is 485pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 3.9A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 500V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 31 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 12 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 25V volts.This device reduces its overall power consumption by using drive voltage (10V).
FDPF5N50NZU Features
a continuous drain current (ID) of 3.9A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 31 ns
FDPF5N50NZU Applications
There are a lot of ON Semiconductor
FDPF5N50NZU applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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