FDPF5N50NZF
- Mfr.Part #
- FDPF5N50NZF
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 4.2A TO220F
- Stock
- 6,329
- In Stock :
- 6,329
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 31 ns
- Height :
- 15.87mm
- Power Dissipation :
- 30W
- Threshold Voltage :
- 5V
- FET Type :
- N-Channel
- Case Connection :
- Isolated
- Element Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 12nC @ 10V
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Breakdown Voltage :
- 500V
- REACH SVHC :
- No SVHC
- Series :
- UniFET-II™
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Packaging :
- Tube
- Weight :
- 2.27g
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-220-3 Full Pack
- Rise Time :
- 19ns
- Turn On Delay Time :
- 5 ns
- JEDEC-95 Code :
- TO-220AB
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 4.2A Tc
- Width :
- 4.7mm
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin (Sn)
- Gate to Source Voltage (Vgs) :
- 25V
- Rds On (Max) @ Id, Vgs :
- 1.75 Ω @ 2.1A, 10V
- Fall Time (Typ) :
- 22 ns
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Published :
- 2013
- Number of Elements :
- 1
- Power Dissipation-Max :
- 30W Tc
- Factory Lead Time :
- 4 Weeks
- Length :
- 10.16mm
- Continuous Drain Current (ID) :
- 4.2A
- Input Capacitance (Ciss) (Max) @ Vds :
- 485pF @ 25V
- Vgs (Max) :
- ±25V
- Mount :
- Through Hole
- Datasheets
- FDPF5N50NZF

N-Channel Tube 1.75 Ω @ 2.1A, 10V ±25V 485pF @ 25V 12nC @ 10V TO-220-3 Full Pack
FDPF5N50NZF Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 485pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 4.2A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 31 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 5 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 25V to 1.In this case, the threshold voltage of the transistor is 5V, which means that it will not activate any of its functions when its threshold voltage reaches 5V.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
FDPF5N50NZF Features
a continuous drain current (ID) of 4.2A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 31 ns
a threshold voltage of 5V
FDPF5N50NZF Applications
There are a lot of ON Semiconductor
FDPF5N50NZF applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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