FDPF5N50FT
- Mfr.Part #
- FDPF5N50FT
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 4.5A TO220F
- Stock
- 18,118
- In Stock :
- 18,118
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Drain to Source Breakdown Voltage :
- 500V
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- Factory Lead Time :
- 4 Weeks
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs (Max) :
- ±30V
- Case Connection :
- Isolated
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Published :
- 2013
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 4.5A
- Number of Pins :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 4.5A Tc
- Weight :
- 2.27g
- Turn-Off Delay Time :
- 28 ns
- Transistor Element Material :
- SILICON
- Series :
- UniFET™
- Element Configuration :
- Single
- Height :
- 16.07mm
- Mount :
- Through Hole
- Power Dissipation :
- 28W
- Gate to Source Voltage (Vgs) :
- 30V
- Input Capacitance (Ciss) (Max) @ Vds :
- 700pF @ 25V
- Length :
- 10.36mm
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- JEDEC-95 Code :
- TO-220AB
- Package / Case :
- TO-220-3 Full Pack
- Fall Time (Typ) :
- 20 ns
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tube
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 22ns
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 1.55 Ω @ 2.25A, 10V
- Width :
- 4.9mm
- Power Dissipation-Max :
- 28W Tc
- Turn On Delay Time :
- 13 ns
- Pbfree Code :
- yes
- Mounting Type :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 8nC @ 10V
- Terminal Finish :
- Tin (Sn)
- Datasheets
- FDPF5N50FT

N-Channel Tube 1.55 Ω @ 2.25A, 10V ±30V 700pF @ 25V 8nC @ 10V TO-220-3 Full Pack
FDPF5N50FT Description
A high voltage MOSFET family called UniFETTM MOSFET is based on DMOS and planar stripe technology. FDPF5N50FT MOSFET is designed to offer superior switching performance, increased avalanche energy strength, and reduced on-state resistance. The lifetime control of UniFET FRFET? MOSFET has improved the reverse recovery performance of the body diode. While most planar MOSFETs have a trr of over 200ns and a reverse dv/dt immunity of 4.5V/ns, this device has a trr of less than 100ns. Therefore, in certain applications where the performance of the MOSFET's body diode is critical, it can eliminate an additional component and increase system reliability. For switching power converter applications such power factor correction (PFC), flat panel display (FPD) TV power, ATX, and electronic lamp ballasts, this device family is appropriate.
FDPF5N50FT Features
-
Low Crss ( Typ. 5pF)
-
100% avalanche tested
-
Low gate charge ( Typ. 11nC)
-
RDS(on) = 1.55? ( Typ.)@ VGS = 10V, ID = 2.25A
FDPF5N50FT Applications
-
Lighting
-
LCD / LED / PDP TV
-
AC-DC Power Supplies
-
AC-DC Power Supplies
-
Uninterruptible Power Supplies
-
This product is general usage and suitable for many different applications.
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