FDPF55N06

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

25V

Number of Terminations :

3

Number of Elements :

1

Drain to Source Breakdown Voltage :

60V

Mounting Type :

Through Hole

Power Dissipation-Max :

48W Tc

Transistor Element Material :

SILICON

Length :

10.36mm

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Factory Lead Time :

5 Weeks

Pulsed Drain Current-Max (IDM) :

220A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±25V

Width :

4.9mm

Turn-Off Delay Time :

70 ns

Terminal Finish :

Tin (Sn)

Height :

16.07mm

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

JEDEC-95 Code :

TO-220AB

Gate Charge (Qg) (Max) @ Vgs :

37nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

55A Tc

Avalanche Energy Rating (Eas) :

480 mJ

JESD-609 Code :

e3

Power Dissipation :

48W

Package / Case :

TO-220-3 Full Pack

Fall Time (Typ) :

95 ns

Mount :

Through Hole

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.022Ohm

ECCN Code :

EAR99

Continuous Drain Current (ID) :

55A

Rds On (Max) @ Id, Vgs :

22m Ω @ 27.5A, 10V

Radiation Hardening :

No

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

AVALANCHE RATED

Weight :

2.27g

Case Connection :

Isolated

Vgs(th) (Max) @ Id :

4V @ 250µA

Rise Time :

130ns

Input Capacitance (Ciss) (Max) @ Vds :

1510pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2013

Series :

UniFET™

Packaging :

Tube

Turn On Delay Time :

30 ns

Element Configuration :

Single