FDPF4N60NZ
- Mfr.Part #
- FDPF4N60NZ
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 3.8A TO220F
- Stock
- 915
- In Stock :
- 915
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Case Connection :
- Isolated
- Mount :
- Through Hole
- Continuous Drain Current (ID) :
- 3.8A
- Factory Lead Time :
- 7 Weeks
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Packaging :
- Tube
- Weight :
- 2.27g
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Fall Time (Typ) :
- 12.8 ns
- ECCN Code :
- EAR99
- Width :
- 4.9mm
- Element Configuration :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 10.8nC @ 10V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Number of Terminations :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Type :
- N-Channel
- Number of Pins :
- 3
- Power Dissipation-Max :
- 28W Tc
- Turn On Delay Time :
- 12.7 ns
- Gate to Source Voltage (Vgs) :
- 25V
- Package / Case :
- TO-220-3 Full Pack
- Height :
- 16.07mm
- Vgs (Max) :
- ±25V
- Pbfree Code :
- yes
- Rise Time :
- 15.1ns
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~150°C TJ
- JEDEC-95 Code :
- TO-220AB
- Series :
- UniFET-II™
- Turn-Off Delay Time :
- 30.2 ns
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 28W
- Published :
- 2013
- Terminal Finish :
- Tin (Sn)
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Current - Continuous Drain (Id) @ 25°C :
- 3.8A Tc
- Drain to Source Breakdown Voltage :
- 600V
- Length :
- 10.36mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 510pF @ 25V
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 2.5 Ω @ 1.9A, 10V
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- Datasheets
- FDPF4N60NZ

N-Channel Tube 2.5 Ω @ 1.9A, 10V ±25V 510pF @ 25V 10.8nC @ 10V TO-220-3 Full Pack
FDPF4N60NZ Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 510pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 600V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 600V.As a result of its turn-off delay time, which is 30.2 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 12.7 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 25VV.In addition to reducing power consumption, this device uses drive voltage (10V).
FDPF4N60NZ Features
a continuous drain current (ID) of 3.8A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 30.2 ns
FDPF4N60NZ Applications
There are a lot of ON Semiconductor
FDPF4N60NZ applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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