FDPF3N50NZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

500V

Transistor Element Material :

SILICON

Case Connection :

Isolated

Input Capacitance (Ciss) (Max) @ Vds :

280pF @ 25V

Published :

2010

ECCN Code :

EAR99

JEDEC-95 Code :

TO-220AB

Power Dissipation-Max :

27W Tc

Fall Time (Typ) :

17 ns

Weight :

2.27g

RoHS Status :

ROHS3 Compliant

Rise Time :

15ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Number of Pins :

3

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

5V @ 250μA

Turn On Delay Time :

10 ns

Length :

10.16mm

Mount :

Through Hole

JESD-609 Code :

e3

FET Type :

N-Channel

Number of Elements :

1

Package / Case :

TO-220-3 Full Pack

Turn-Off Delay Time :

26 ns

Factory Lead Time :

4 Weeks

Pbfree Code :

yes

Number of Terminations :

3

Series :

UniFET-II™

Transistor Application :

SWITCHING

Terminal Finish :

Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Gate to Source Voltage (Vgs) :

25V

Element Configuration :

Single

Drain Current-Max (Abs) (ID) :

3A

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Width :

4.7mm

Packaging :

Tube

Continuous Drain Current (ID) :

3A

Power Dissipation :

27W

Rds On (Max) @ Id, Vgs :

2.5 Ω @ 1.5A, 10V

Operating Temperature :

-55°C~150°C TJ

Height :

15.87mm

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 10V

Vgs (Max) :

±25V