FDPF39N20

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

30V

Turn On Delay Time :

30 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

4.9mm

Fall Time (Typ) :

150 ns

Terminal Finish :

Tin (Sn)

Vgs (Max) :

±30V

Resistance :

66mOhm

REACH SVHC :

No SVHC

Rise Time :

160ns

Element Configuration :

Single

Avalanche Energy Rating (Eas) :

860 mJ

Additional Feature :

FAST SWITCHING

Height :

16.07mm

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-220-3 Full Pack

Transistor Element Material :

SILICON

Power Dissipation-Max :

37W Tc

Case Connection :

Isolated

Current - Continuous Drain (Id) @ 25°C :

39A Tc

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

2130pF @ 25V

Length :

10.36mm

Power Dissipation :

37W

JESD-609 Code :

e3

Factory Lead Time :

4 Weeks

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Threshold Voltage :

5V

Radiation Hardening :

No

Number of Terminations :

3

Pbfree Code :

yes

Number of Elements :

1

Continuous Drain Current (ID) :

39A

Rds On (Max) @ Id, Vgs :

66m Ω @ 19.5A, 10V

Vgs(th) (Max) @ Id :

5V @ 250μA

Series :

UniFET™

Weight :

2.27g

Gate Charge (Qg) (Max) @ Vgs :

49nC @ 10V

ECCN Code :

EAR99

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

150 ns

Published :

2013

FET Type :

N-Channel

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

JEDEC-95 Code :

TO-220AB

Lead Free :

Lead Free

Mount :

Through Hole

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Drain to Source Breakdown Voltage :

200V