FDPF3860T
- Mfr.Part #
- FDPF3860T
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 20A TO220F
- Stock
- 1,271
- In Stock :
- 1,271
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 8 Weeks
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Turn On Delay Time :
- 15 ns
- Element Configuration :
- Single
- Power Dissipation-Max :
- 33.8W Tc
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Weight :
- 2.27g
- Operating Mode :
- ENHANCEMENT MODE
- Threshold Voltage :
- 2.5V
- Qualification Status :
- Not Qualified
- Gate to Source Voltage (Vgs) :
- 20V
- Mounting Type :
- Through Hole
- JESD-609 Code :
- e3
- Turn-Off Delay Time :
- 24 ns
- Series :
- PowerTrench®
- Fall Time (Typ) :
- 7 ns
- Number of Terminations :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Pbfree Code :
- yes
- Mount :
- Through Hole
- Avalanche Energy Rating (Eas) :
- 278 mJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 38.2m Ω @ 5.9A, 10V
- Packaging :
- Tube
- Reach Compliance Code :
- not_compliant
- Package / Case :
- TO-220-3 Full Pack
- Terminal Finish :
- Tin (Sn)
- Continuous Drain Current (ID) :
- 20A
- Published :
- 2013
- Pulsed Drain Current-Max (IDM) :
- 80A
- Height :
- 16.07mm
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Power Dissipation :
- 33.8W
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- ECCN Code :
- EAR99
- Rise Time :
- 17ns
- Length :
- 10.36mm
- Drain to Source Breakdown Voltage :
- 100V
- Case Connection :
- Isolated
- Resistance :
- 3.802GOhm
- Width :
- 4.9mm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 1800pF @ 25V
- Number of Elements :
- 1
- Vgs (Max) :
- ±20V
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 35nC @ 10V
- JEDEC-95 Code :
- TO-220AB
- Lead Free :
- Lead Free
- Datasheets
- FDPF3860T
FDPF3860T Documents

N-Channel Tube 38.2m Ω @ 5.9A, 10V ±20V 1800pF @ 25V 35nC @ 10V TO-220-3 Full Pack
FDPF3860T Description
The FDPF3860T is a 100V N-channel PowerTrench? MOSFET ha ing been specially tailored to minimize the on-state resistance and to maintain a low gate charge for superior switching performance. The latest medium voltage power MOSFET FDPF3860T is an optimized power switch combining small gate charge (QG), small reverse recovery charge (Qrr), and soft reverse recovery body diode, which contributes to fast switching for synchronous rectification in AC/DC power supplies. It employs a shielded-gate structure that provides a charge balance.
FDPF3860T Features
-
RDS(on) = 29.1m? ( Typ.) @ VGS = 10V, ID = 5.9A
-
Fast switching speed
-
Low Gate Charge
-
High-performance trench technology for extremely low RDS(on)
-
High power and current handling capability
-
RoHS compliant
FDPF3860T Applications
-
Consumer Appliances
-
Synchronous Rectification
-
LCD / LED / PDP TV
-
Micro Solar Inverters
-
Uninterruptible Power Supplies
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