FDPF3860T
- Mfr.Part #
- FDPF3860T
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 20A TO220F
- Stock
- 1,271
- In Stock :
- 1,271
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JEDEC-95 Code :
- TO-220AB
- Transistor Element Material :
- SILICON
- Width :
- 4.9mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 1800pF @ 25V
- Vgs (Max) :
- ±20V
- Gate to Source Voltage (Vgs) :
- 20V
- Series :
- PowerTrench®
- Length :
- 10.36mm
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Resistance :
- 3.802GOhm
- Weight :
- 2.27g
- FET Type :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 80A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain to Source Breakdown Voltage :
- 100V
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Power Dissipation :
- 33.8W
- REACH SVHC :
- No SVHC
- Operating Temperature :
- -55°C~150°C TJ
- Rds On (Max) @ Id, Vgs :
- 38.2m Ω @ 5.9A, 10V
- Mount :
- Through Hole
- Lead Free :
- Lead Free
- Reach Compliance Code :
- not_compliant
- Turn-Off Delay Time :
- 24 ns
- Number of Elements :
- 1
- Turn On Delay Time :
- 15 ns
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max :
- 33.8W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Threshold Voltage :
- 2.5V
- Packaging :
- Tube
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Package / Case :
- TO-220-3 Full Pack
- Number of Pins :
- 3
- Fall Time (Typ) :
- 7 ns
- Transistor Application :
- SWITCHING
- Case Connection :
- Isolated
- Mounting Type :
- Through Hole
- Factory Lead Time :
- 8 Weeks
- Number of Terminations :
- 3
- Avalanche Energy Rating (Eas) :
- 278 mJ
- Qualification Status :
- Not Qualified
- Gate Charge (Qg) (Max) @ Vgs :
- 35nC @ 10V
- Terminal Finish :
- Tin (Sn)
- Published :
- 2013
- Height :
- 16.07mm
- Rise Time :
- 17ns
- Continuous Drain Current (ID) :
- 20A
- Datasheets
- FDPF3860T

N-Channel Tube 38.2m Ω @ 5.9A, 10V ±20V 1800pF @ 25V 35nC @ 10V TO-220-3 Full Pack
FDPF3860T Description
The FDPF3860T is a 100V N-channel PowerTrench? MOSFET ha ing been specially tailored to minimize the on-state resistance and to maintain a low gate charge for superior switching performance. The latest medium voltage power MOSFET FDPF3860T is an optimized power switch combining small gate charge (QG), small reverse recovery charge (Qrr), and soft reverse recovery body diode, which contributes to fast switching for synchronous rectification in AC/DC power supplies. It employs a shielded-gate structure that provides a charge balance.
FDPF3860T Features
-
RDS(on) = 29.1m? ( Typ.) @ VGS = 10V, ID = 5.9A
-
Fast switching speed
-
Low Gate Charge
-
High-performance trench technology for extremely low RDS(on)
-
High power and current handling capability
-
RoHS compliant
FDPF3860T Applications
-
Consumer Appliances
-
Synchronous Rectification
-
LCD / LED / PDP TV
-
Micro Solar Inverters
-
Uninterruptible Power Supplies
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