FDPF3860T
- Mfr.Part #
- FDPF3860T
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 20A TO220F
- Stock
- 1,271
- In Stock :
- 1,271
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Height :
- 16.07mm
- ECCN Code :
- EAR99
- Pulsed Drain Current-Max (IDM) :
- 80A
- Packaging :
- Tube
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Mount :
- Through Hole
- Package / Case :
- TO-220-3 Full Pack
- Turn-Off Delay Time :
- 24 ns
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Width :
- 4.9mm
- Qualification Status :
- Not Qualified
- Continuous Drain Current (ID) :
- 20A
- Rds On (Max) @ Id, Vgs :
- 38.2m Ω @ 5.9A, 10V
- Avalanche Energy Rating (Eas) :
- 278 mJ
- JEDEC-95 Code :
- TO-220AB
- Length :
- 10.36mm
- Rise Time :
- 17ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 1800pF @ 25V
- Power Dissipation-Max :
- 33.8W Tc
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 35nC @ 10V
- Operating Mode :
- ENHANCEMENT MODE
- Factory Lead Time :
- 8 Weeks
- Terminal Finish :
- Tin (Sn)
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Case Connection :
- Isolated
- Resistance :
- 3.802GOhm
- Turn On Delay Time :
- 15 ns
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Power Dissipation :
- 33.8W
- Published :
- 2013
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Lead Free :
- Lead Free
- Weight :
- 2.27g
- Number of Pins :
- 3
- Vgs (Max) :
- ±20V
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Gate to Source Voltage (Vgs) :
- 20V
- Series :
- PowerTrench®
- JESD-609 Code :
- e3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Reach Compliance Code :
- not_compliant
- Fall Time (Typ) :
- 7 ns
- FET Type :
- N-Channel
- Threshold Voltage :
- 2.5V
- Drain to Source Breakdown Voltage :
- 100V
- Datasheets
- FDPF3860T
FDPF3860T Documents

N-Channel Tube 38.2m Ω @ 5.9A, 10V ±20V 1800pF @ 25V 35nC @ 10V TO-220-3 Full Pack
FDPF3860T Description
The FDPF3860T is a 100V N-channel PowerTrench? MOSFET ha ing been specially tailored to minimize the on-state resistance and to maintain a low gate charge for superior switching performance. The latest medium voltage power MOSFET FDPF3860T is an optimized power switch combining small gate charge (QG), small reverse recovery charge (Qrr), and soft reverse recovery body diode, which contributes to fast switching for synchronous rectification in AC/DC power supplies. It employs a shielded-gate structure that provides a charge balance.
FDPF3860T Features
-
RDS(on) = 29.1m? ( Typ.) @ VGS = 10V, ID = 5.9A
-
Fast switching speed
-
Low Gate Charge
-
High-performance trench technology for extremely low RDS(on)
-
High power and current handling capability
-
RoHS compliant
FDPF3860T Applications
-
Consumer Appliances
-
Synchronous Rectification
-
LCD / LED / PDP TV
-
Micro Solar Inverters
-
Uninterruptible Power Supplies
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