FDPF3860T
- Mfr.Part #
- FDPF3860T
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 2
- Stock
- 24,728
- In Stock :
- 24,728
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Turn-Off Delay Time :
- 24 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Mounting Type :
- Through Hole
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Factory Lead Time :
- 8 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 35nC @ 10V
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tube
- Width :
- 4.9mm
- Case Connection :
- Isolated
- Operating Mode :
- ENHANCEMENT MODE
- Reach Compliance Code :
- not_compliant
- FET Type :
- N-Channel
- Turn On Delay Time :
- 15 ns
- Resistance :
- 3.802GOhm
- Qualification Status :
- Not Qualified
- Number of Pins :
- 3
- JEDEC-95 Code :
- TO-220AB
- Number of Terminations :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Pbfree Code :
- yes
- Continuous Drain Current (ID) :
- 20A
- Vgs (Max) :
- ±20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Finish :
- Tin (Sn)
- Lead Free :
- Lead Free
- Threshold Voltage :
- 2.5V
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Rise Time :
- 17ns
- Drain to Source Breakdown Voltage :
- 100V
- Package / Case :
- TO-220-3 Full Pack
- REACH SVHC :
- No SVHC
- Input Capacitance (Ciss) (Max) @ Vds :
- 1800pF @ 25V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Published :
- 2013
- Pulsed Drain Current-Max (IDM) :
- 80A
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Height :
- 16.07mm
- Length :
- 10.36mm
- Series :
- PowerTrench®
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- Fall Time (Typ) :
- 7 ns
- Power Dissipation :
- 33.8W
- Gate to Source Voltage (Vgs) :
- 20V
- Avalanche Energy Rating (Eas) :
- 278 mJ
- Rds On (Max) @ Id, Vgs :
- 38.2m Ω @ 5.9A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Weight :
- 2.27g
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 33.8W Tc
- Datasheets
- FDPF3860T

N-Channel Tube 38.2m Ω @ 5.9A, 10V ±20V 1800pF @ 25V 35nC @ 10V TO-220-3 Full Pack
FDPF3860T Description
The FDPF3860T is a 100V N-channel PowerTrench? MOSFET ha ing been specially tailored to minimize the on-state resistance and to maintain a low gate charge for superior switching performance. The latest medium voltage power MOSFET FDPF3860T is an optimized power switch combining small gate charge (QG), small reverse recovery charge (Qrr), and soft reverse recovery body diode, which contributes to fast switching for synchronous rectification in AC/DC power supplies. It employs a shielded-gate structure that provides a charge balance.
FDPF3860T Features
-
RDS(on) = 29.1m? ( Typ.) @ VGS = 10V, ID = 5.9A
-
Fast switching speed
-
Low Gate Charge
-
High-performance trench technology for extremely low RDS(on)
-
High power and current handling capability
-
RoHS compliant
FDPF3860T Applications
-
Consumer Appliances
-
Synchronous Rectification
-
LCD / LED / PDP TV
-
Micro Solar Inverters
-
Uninterruptible Power Supplies
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