FDPF2D3N10C
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- Mfr.Part #
- FDPF2D3N10C
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 222A TO220F
- Stock
- 23,281
- In Stock ：
- 23,281
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 152nC @ 10V
- Mounting Type :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 222A Tc
- FET Type :
- N-Channel
- Vgs (Max) :
- ±20V
- Rds On (Max) @ Id, Vgs :
- 2.3m Ω @ 100A, 10V
- Vgs(th) (Max) @ Id :
- 4V @ 700μA
- Drain to Source Voltage (Vdss) :
- 100V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max :
- 45W Tc
- Pbfree Code :
- yes
- Package / Case :
- TO-220-3 Full Pack
- Factory Lead Time :
- 20 Weeks
- Operating Temperature :
- -55°C~175°C TJ
- Mount :
- Through Hole
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Series :
- PowerTrench®
- RoHS Status :
- RoHS Compliant
- Element Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 11180pF @ 50V
- Weight :
- 2.27g
- Datasheets
- FDPF2D3N10C
N-Channel 2.3m Ω @ 100A, 10V ±20V 11180pF @ 50V 152nC @ 10V 100V TO-220-3 Full Pack
FDPF2D3N10C Description
The FDPF2D3N10C is a single channel MV MOSFET with a voltage of 100V from ON Semiconductor. FDPF2D3N10C operates between -55°C and 175°C, with a maximum power dissipation of 45W Tc. The TO-220-3 Full Pack packaging method is available. Onsemi's innovative POWERTRENCH process utilizes Shielded Gate technology to generate this channel MV MOSFET. With the best-in-class soft body diode, this method has been designed to minimize on-state resistance while maintaining exceptional switching performance.
FDPF2D3N10C Features
Max rDS(on) = 2.3 m at VGS = 10 V, ID = 100 A
Extremely Low Reverse Recovery Charge, Qrr
100% UIL Tested
RoHS Compliant
FDPF2D3N10C Applications
Synchronous Rectification for ATX / Server / Telecom PSU
Motor Drives and Uninterruptible Power Supplies
Micro Solar Inverter
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