FDPF20N50T
- Mfr.Part #
- FDPF20N50T
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 20A TO220F
- Stock
- 779
- In Stock :
- 779
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 38.5W Tc
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 38.5W
- Gate to Source Voltage (Vgs) :
- 30V
- Operating Mode :
- ENHANCEMENT MODE
- JEDEC-95 Code :
- TO-220AB
- Case Connection :
- Isolated
- Width :
- 4.9mm
- Factory Lead Time :
- 9 Weeks
- Turn-Off Delay Time :
- 100 ns
- Fall Time (Typ) :
- 105 ns
- Mounting Type :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Radiation Hardening :
- No
- Drain to Source Breakdown Voltage :
- 500V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Turn On Delay Time :
- 95 ns
- Height :
- 16.07mm
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Resistance :
- 230mOhm
- Number of Elements :
- 1
- Mount :
- Through Hole
- Weight :
- 2.27g
- Terminal Finish :
- Tin (Sn)
- Lead Free :
- Lead Free
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Temperature :
- -55°C~150°C TJ
- Vgs (Max) :
- ±30V
- Gate Charge (Qg) (Max) @ Vgs :
- 59.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3120pF @ 25V
- Published :
- 2013
- Transistor Element Material :
- SILICON
- Rise Time :
- 375ns
- Packaging :
- Tube
- Element Configuration :
- Single
- Voltage - Rated DC :
- 500V
- ECCN Code :
- EAR99
- Continuous Drain Current (ID) :
- 20A
- Current Rating :
- 20A
- Length :
- 10.36mm
- Rds On (Max) @ Id, Vgs :
- 230m Ω @ 10A, 10V
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Series :
- UniFET™
- JESD-609 Code :
- e3
- Package / Case :
- TO-220-3 Full Pack
- Pulsed Drain Current-Max (IDM) :
- 80A
- Datasheets
- FDPF20N50T

N-Channel Tube 230m Ω @ 10A, 10V ±30V 3120pF @ 25V 59.5nC @ 10V TO-220-3 Full Pack
FDPF20N50T Overview
The maximum input capacitance of this device is 3120pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 20A.When VGS=500V, and ID flows to VDS at 500VVDS, the drain-source breakdown voltage is 500V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 100 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 80A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 95 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
FDPF20N50T Features
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 80A.
FDPF20N50T Applications
There are a lot of ON Semiconductor
FDPF20N50T applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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