FDPF18N50

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±30V

Pbfree Code :

yes

Threshold Voltage :

5V

Case Connection :

Isolated

Gate to Source Voltage (Vgs) :

30V

Length :

10.16mm

Width :

4.7mm

Height :

9.19mm

Fall Time (Typ) :

90 ns

Turn On Delay Time :

55 ns

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

265m Ω @ 9A, 10V

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Element Configuration :

Single

Vgs(th) (Max) @ Id :

5V @ 250μA

Avalanche Energy Rating (Eas) :

945 mJ

Package / Case :

TO-220-3 Full Pack

Mount :

Through Hole

Factory Lead Time :

9 Weeks

Operating Temperature :

-55°C~150°C TJ

JEDEC-95 Code :

TO-220AB

Series :

UniFET™

Packaging :

Tube

Turn-Off Delay Time :

95 ns

Input Capacitance (Ciss) (Max) @ Vds :

2860pF @ 25V

Transistor Application :

SWITCHING

Power Dissipation :

38.5W

Weight :

2.27g

FET Type :

N-Channel

Power Dissipation-Max :

38.5W Tc

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

18A Tc

REACH SVHC :

No SVHC

Number of Pins :

3

Continuous Drain Current (ID) :

18A

Contact Plating :

Tin

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reach Compliance Code :

not_compliant

Drain to Source Breakdown Voltage :

500V

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

72A

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Additional Feature :

FAST SWITCHING

Number of Terminations :

3

Rise Time :

165ns

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Resistance :

265mOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2004