FDPF18N50
- Mfr.Part #
- FDPF18N50
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 18A TO220F
- Stock
- 5,130
- In Stock :
- 5,130
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~150°C TJ
- Turn On Delay Time :
- 55 ns
- Rds On (Max) @ Id, Vgs :
- 265m Ω @ 9A, 10V
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- TO-220-3 Full Pack
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Power Dissipation-Max :
- 38.5W Tc
- JEDEC-95 Code :
- TO-220AB
- Avalanche Energy Rating (Eas) :
- 945 mJ
- Mount :
- Through Hole
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Threshold Voltage :
- 5V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Width :
- 4.7mm
- Element Configuration :
- Single
- Case Connection :
- Isolated
- Input Capacitance (Ciss) (Max) @ Vds :
- 2860pF @ 25V
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 18A
- Factory Lead Time :
- 9 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 9.19mm
- REACH SVHC :
- No SVHC
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs (Max) :
- ±30V
- Current - Continuous Drain (Id) @ 25°C :
- 18A Tc
- Mounting Type :
- Through Hole
- Published :
- 2004
- Number of Elements :
- 1
- Contact Plating :
- Tin
- Resistance :
- 265mOhm
- Turn-Off Delay Time :
- 95 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 60nC @ 10V
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Pulsed Drain Current-Max (IDM) :
- 72A
- Number of Terminations :
- 3
- Rise Time :
- 165ns
- Gate to Source Voltage (Vgs) :
- 30V
- Fall Time (Typ) :
- 90 ns
- Qualification Status :
- Not Qualified
- Transistor Application :
- SWITCHING
- Reach Compliance Code :
- not_compliant
- Drain to Source Breakdown Voltage :
- 500V
- Weight :
- 2.27g
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Length :
- 10.16mm
- Power Dissipation :
- 38.5W
- Packaging :
- Tube
- Additional Feature :
- FAST SWITCHING
- Series :
- UniFET™
- Lead Free :
- Lead Free
- Datasheets
- FDPF18N50

N-Channel Tube 265m Ω @ 9A, 10V ±30V 2860pF @ 25V 60nC @ 10V TO-220-3 Full Pack
FDPF18N50 Description
UniFETTM MOSFET is ON Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX, and electronic
lamp ballasts
FDPF18N50 Features
RDS(on) = 220 mΩ (Typ.) @ VGS = 10 V, ID = 9 A
Low Gate Charge (Typ. 45 nC)
Low Crss (Typ. 25 pF)
100% Avalanche Tested
FDPF18N50 Applications
LCD/LED/PDP TV
Lighting
Uninterruptible Power Supply
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