FDPF18N20FT-G
- Mfr.Part #
- FDPF18N20FT-G
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 18A TO220F
- Stock
- 33,881
- In Stock :
- 33,881
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 140m Ω @ 9A, 10V
- Case Connection :
- Isolated
- Mount :
- Through Hole
- Number of Channels :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Fall Time (Typ) :
- 40 ns
- Gate to Source Voltage (Vgs) :
- 30V
- Factory Lead Time :
- 4 Weeks
- Drain to Source Voltage (Vdss) :
- 200V
- Continuous Drain Current (ID) :
- 18A
- Element Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 18A Tc
- FET Type :
- N-Channel
- Rise Time :
- 50ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 1180pF @ 25V
- Weight :
- 2.27g
- Vgs (Max) :
- ±30V
- Turn On Delay Time :
- 16 ns
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 50 ns
- Operating Mode :
- ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM) :
- 72A
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package / Case :
- TO-220-3 Full Pack
- Reach Compliance Code :
- not_compliant
- DS Breakdown Voltage-Min :
- 200V
- Gate Charge (Qg) (Max) @ Vgs :
- 26nC @ 10V
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 35W Tc
- Series :
- UniFET™
- Number of Terminations :
- 3
- Packaging :
- Tube
- JEDEC-95 Code :
- TO-220AB
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Datasheets
- FDPF18N20FT-G

N-Channel Tube 140m Ω @ 9A, 10V ±30V 1180pF @ 25V 26nC @ 10V 200V TO-220-3 Full Pack
FDPF18N20FT-G Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1180pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 18A amps.It is [50 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 72A.A turn-on delay time of 16 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.The DS breakdown voltage should be maintained above 200V to maintain normal operation.To operate this transistor, you will need a 200V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
FDPF18N20FT-G Features
a continuous drain current (ID) of 18A
the turn-off delay time is 50 ns
based on its rated peak drain current 72A.
a 200V drain to source voltage (Vdss)
FDPF18N20FT-G Applications
There are a lot of ON Semiconductor
FDPF18N20FT-G applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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