FDPF18N20FT

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

41W

Fall Time (Typ) :

40 ns

Case Connection :

Isolated

Continuous Drain Current (ID) :

18A

Vgs(th) (Max) @ Id :

5V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

50 ns

Rise Time :

50ns

Drain to Source Breakdown Voltage :

200V

Rds On (Max) @ Id, Vgs :

140m Ω @ 9A, 10V

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Power Dissipation-Max :

41W Tc

Factory Lead Time :

9 Weeks

JESD-609 Code :

e3

Height :

16.07mm

Gate to Source Voltage (Vgs) :

30V

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±30V

Length :

10.36mm

Number of Terminations :

3

Terminal Finish :

Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

1180pF @ 25V

Published :

2013

Series :

UniFET™

Number of Elements :

1

Weight :

2.27g

Packaging :

Tube

JEDEC-95 Code :

TO-220AB

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Element Configuration :

Single

Number of Pins :

3

Turn On Delay Time :

16 ns

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-220-3 Full Pack

Pulsed Drain Current-Max (IDM) :

72A

ECCN Code :

EAR99

Width :

4.9mm

Radiation Hardening :

No

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Mount :

Through Hole