FDPF18N20FT
- Mfr.Part #
- FDPF18N20FT
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 18A TO220F
- Stock
- 3,347
- In Stock :
- 3,347
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Vgs (Max) :
- ±30V
- Factory Lead Time :
- 9 Weeks
- FET Type :
- N-Channel
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Drain to Source Breakdown Voltage :
- 200V
- Current - Continuous Drain (Id) @ 25°C :
- 18A Tc
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Rise Time :
- 50ns
- Rds On (Max) @ Id, Vgs :
- 140m Ω @ 9A, 10V
- Radiation Hardening :
- No
- Turn On Delay Time :
- 16 ns
- Fall Time (Typ) :
- 40 ns
- Weight :
- 2.27g
- Gate Charge (Qg) (Max) @ Vgs :
- 26nC @ 10V
- Published :
- 2013
- Continuous Drain Current (ID) :
- 18A
- Packaging :
- Tube
- Series :
- UniFET™
- Height :
- 16.07mm
- Power Dissipation-Max :
- 41W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package / Case :
- TO-220-3 Full Pack
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Gate to Source Voltage (Vgs) :
- 30V
- Mount :
- Through Hole
- Power Dissipation :
- 41W
- Element Configuration :
- Single
- Terminal Finish :
- Tin (Sn)
- Operating Mode :
- ENHANCEMENT MODE
- JEDEC-95 Code :
- TO-220AB
- Turn-Off Delay Time :
- 50 ns
- Transistor Element Material :
- SILICON
- Case Connection :
- Isolated
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Length :
- 10.36mm
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 1180pF @ 25V
- Pulsed Drain Current-Max (IDM) :
- 72A
- Width :
- 4.9mm
- Datasheets
- FDPF18N20FT

N-Channel Tube 140m Ω @ 9A, 10V ±30V 1180pF @ 25V 26nC @ 10V TO-220-3 Full Pack
FDPF18N20FT Description
The ON Semiconductor FDPF18N20FT UniFETTM MOSFET family is based on planar stripe and DMOS technology. The FDPF18N20FT is designed to have a lower on-state resistance, improved switching performance, and stronger avalanche energy strength. UniFET FRFET? MOSFET body diode reverse recovery performance has been improved via lifetime control. It has a trr of less than 100nsec and a reverse dv/dt immunity of 15V/ns, whereas standard planar MOSFETs have trrs of more than 200nsec and 4.5V/nsec, respectively.
FDPF18N20FT Features
-
RDS(on) = 120mΩ ( Typ.)@ VGS = 10V, ID = 9A
-
Low gate charge ( Typ. 20nC)
-
Low Crss ( Typ. 24pF)
-
100% avalanche tested
-
RoHS compliant
FDPF18N20FT Applications
-
This product is general usage and suitable for many different applications.
-
LCD / LED / PDP TV
-
Consumer Appliances
-
Lighting
-
Uninterruptible Power Supplies
-
AC-DC Power Supplies
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