FDPF12N60NZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Gate to Source Voltage (Vgs) :

30V

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pbfree Code :

yes

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Power Dissipation :

39W

Input Capacitance (Ciss) (Max) @ Vds :

1676pF @ 25V

Mounting Type :

Through Hole

Radiation Hardening :

No

Transistor Element Material :

SILICON

Rise Time :

110ns

Avalanche Energy Rating (Eas) :

565 mJ

Turn-Off Delay Time :

170 ns

Turn On Delay Time :

25 ns

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

600V

Number of Terminations :

3

Continuous Drain Current (ID) :

12A

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

ECCN Code :

EAR99

Weight :

2.27g

Package / Case :

TO-220-3 Full Pack

Pulsed Drain Current-Max (IDM) :

48A

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Lead Free :

Lead Free

Series :

UniFET-II™

Power Dissipation-Max :

39W Tc

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Case Connection :

Isolated

Rds On (Max) @ Id, Vgs :

650m Ω @ 6A, 10V

Mount :

Through Hole

Transistor Application :

SWITCHING

Contact Plating :

Tin

Factory Lead Time :

7 Weeks

Drain-source On Resistance-Max :

0.65Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Published :

2013

JEDEC-95 Code :

TO-220AB

Number of Pins :

3

Vgs(th) (Max) @ Id :

5V @ 250μA

Fall Time (Typ) :

130 ns

Number of Elements :

1

Vgs (Max) :

±30V

Operating Temperature :

-55°C~150°C TJ