FDPF12N60NZ
- Mfr.Part #
- FDPF12N60NZ
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 1
- Stock
- 48,303
- In Stock :
- 48,303
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 12A
- Published :
- 2013
- Power Dissipation :
- 39W
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Avalanche Energy Rating (Eas) :
- 565 mJ
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JEDEC-95 Code :
- TO-220AB
- Number of Elements :
- 1
- Gate to Source Voltage (Vgs) :
- 30V
- Rise Time :
- 110ns
- Power Dissipation-Max :
- 39W Tc
- Lead Free :
- Lead Free
- Series :
- UniFET-II™
- Rds On (Max) @ Id, Vgs :
- 650m Ω @ 6A, 10V
- Weight :
- 2.27g
- Fall Time (Typ) :
- 130 ns
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Gate Charge (Qg) (Max) @ Vgs :
- 34nC @ 10V
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Pulsed Drain Current-Max (IDM) :
- 48A
- Factory Lead Time :
- 7 Weeks
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 1676pF @ 25V
- Vgs (Max) :
- ±30V
- FET Type :
- N-Channel
- Mounting Type :
- Through Hole
- Package / Case :
- TO-220-3 Full Pack
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn On Delay Time :
- 25 ns
- Packaging :
- Tube
- Contact Plating :
- Tin
- Mount :
- Through Hole
- JESD-609 Code :
- e3
- Case Connection :
- Isolated
- Drain-source On Resistance-Max :
- 0.65Ohm
- Drain to Source Breakdown Voltage :
- 600V
- Turn-Off Delay Time :
- 170 ns
- Datasheets
- FDPF12N60NZ

N-Channel Tube 650m Ω @ 6A, 10V ±30V 1676pF @ 25V 34nC @ 10V TO-220-3 Full Pack
FDPF12N60NZ Description
The FDPF12N60NZ UniFETTM II MOSFET is from a high-voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress.
FDPF12N60NZ Features
-
RDS(on) = 530mΩ( Typ.)@ VGS = 10V, ID = 6A
-
Low gate charge ( Typ. 26nC)
-
Low Crss ( Typ. 12pF)
-
100% avalanche tested
-
Improved dv/dt capability
-
ESD improved capability
-
RoHS compliant
FDPF12N60NZ Applications
-
LCD / LED / PDP TV
-
Lighting
-
Uninterruptible Power Supplies
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