FDPF12N50T

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Series :

UniFET™

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain-source On Resistance-Max :

0.65Ohm

Number of Pins :

3

Mounting Type :

Through Hole

Drain to Source Breakdown Voltage :

500V

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

24 ns

Published :

2013

FET Type :

N-Channel

Number of Elements :

1

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Packaging :

Tube

JEDEC-95 Code :

TO-220AB

Pulsed Drain Current-Max (IDM) :

46A

Gate to Source Voltage (Vgs) :

30V

Power Dissipation :

165W

Radiation Hardening :

No

Transistor Application :

SWITCHING

Package / Case :

TO-220-3 Full Pack

Weight :

2.27g

Vgs (Max) :

±30V

Avalanche Energy Rating (Eas) :

456 mJ

Rds On (Max) @ Id, Vgs :

650m Ω @ 6A, 10V

RoHS Status :

ROHS3 Compliant

Rise Time :

50ns

Transistor Element Material :

SILICON

Turn-Off Delay Time :

45 ns

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

11.5A Tc

Terminal Finish :

Tin (Sn)

Fall Time (Typ) :

30 ns

Element Configuration :

Single

Pbfree Code :

yes

Factory Lead Time :

9 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

1315pF @ 25V

Vgs(th) (Max) @ Id :

5V @ 250μA

Case Connection :

Isolated

Mount :

Through Hole

Continuous Drain Current (ID) :

11.5A

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Power Dissipation-Max :

42W Tc