FDPF12N50NZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Vgs(th) (Max) @ Id :

5V @ 250μA

Continuous Drain Current (ID) :

11.5A

Lead Free :

Lead Free

Length :

10.36mm

Terminal Finish :

Tin (Sn)

Rise Time :

50ns

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

520m Ω @ 5.75A, 10V

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

1235pF @ 25V

FET Type :

N-Channel

JEDEC-95 Code :

TO-220AB

Turn On Delay Time :

20 ns

Avalanche Energy Rating (Eas) :

560 mJ

Turn-Off Delay Time :

60 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

Case Connection :

Isolated

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Factory Lead Time :

4 Weeks

Fall Time (Typ) :

45 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-220-3 Full Pack

DS Breakdown Voltage-Min :

500V

Mount :

Through Hole

Weight :

2.27g

Qualification Status :

Not Qualified

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

JESD-609 Code :

e3

Width :

4.9mm

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

500V

Series :

UniFET-II™

Reach Compliance Code :

not_compliant

Pbfree Code :

yes

Published :

2004

Vgs (Max) :

±25V

Height :

16.07mm

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

11.5A Tc

Pulsed Drain Current-Max (IDM) :

46A

Gate to Source Voltage (Vgs) :

25V

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tube

Power Dissipation :

42W

Transistor Element Material :

SILICON

Power Dissipation-Max :

42W Tc

Resistance :

520mOhm

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V