FDPC8016S

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

FET Type :

2 N-Channel (Dual) Asymmetrical

Number of Pins :

8

RoHS Status :

ROHS3 Compliant

Power - Max :

2.1W 2.3W

Fall Time (Typ) :

3 ns

Pbfree Code :

yes

Width :

6.1mm

Weight :

207.7333mg

Rise Time :

4ns

ECCN Code :

EAR99

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Length :

5.1mm

Input Capacitance (Ciss) (Max) @ Vds :

2375pF @ 13V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Current - Continuous Drain (Id) @ 25°C :

20A 35A

Max Power Dissipation :

42W

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

12V

Packaging :

Tape and Reel (TR)

FET Feature :

Logic Level Gate

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

25V

Mounting Type :

Surface Mount

Series :

PowerTrench®

Turn On Delay Time :

13 ns

Terminal Finish :

Tin (Sn)

Terminal Form :

NO LEAD

Continuous Drain Current (ID) :

100A

Reach Compliance Code :

not_compliant

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Mount :

Surface Mount

Package / Case :

8-PowerWDFN

Element Configuration :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

73 mJ

Factory Lead Time :

23 Weeks

Height :

750μm

Turn-Off Delay Time :

38 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Channels :

2

Number of Terminations :

8

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Pulsed Drain Current-Max (IDM) :

75A

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

2

Rds On (Max) @ Id, Vgs :

3.8m Ω @ 20A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED