FDPC8016S

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate to Source Voltage (Vgs) :

12V

Pulsed Drain Current-Max (IDM) :

75A

Length :

5.1mm

Turn-Off Delay Time :

38 ns

Fall Time (Typ) :

3 ns

Drain to Source Breakdown Voltage :

25V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

8-PowerWDFN

Width :

6.1mm

Rds On (Max) @ Id, Vgs :

3.8m Ω @ 20A, 10V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Number of Pins :

8

Rise Time :

4ns

Transistor Element Material :

SILICON

Height :

750μm

Max Power Dissipation :

42W

Transistor Application :

SWITCHING

Number of Elements :

2

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

73 mJ

Series :

PowerTrench®

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Dual

Number of Channels :

2

Power - Max :

2.1W 2.3W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Number of Terminations :

8

Terminal Form :

NO LEAD

FET Type :

2 N-Channel (Dual) Asymmetrical

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

20A 35A

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

not_compliant

Continuous Drain Current (ID) :

100A

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

13 ns

Input Capacitance (Ciss) (Max) @ Vds :

2375pF @ 13V

Terminal Finish :

Tin (Sn)

Factory Lead Time :

23 Weeks

FET Feature :

Logic Level Gate

Weight :

207.7333mg

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mount :

Surface Mount

Case Connection :

DRAIN

Pbfree Code :

yes