FDPC8013S
- Mfr.Part #
- FDPC8013S
- Manufacturer
- onsemi
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- MOSFET 2N-CH 30V 13A/26A 3.3MM
- Stock
- 5,056
- In Stock :
- 5,056
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Fall Time (Typ) :
- 4 ns
- Published :
- 2009
- Gate Charge (Qg) (Max) @ Vgs :
- 13nC @ 10V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Weight :
- 192mg
- REACH SVHC :
- No SVHC
- Gate to Source Voltage (Vgs) :
- 20V
- Series :
- PowerTrench®
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Package / Case :
- 8-PowerWDFN
- Packaging :
- Digi-Reel®
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 13A 26A
- Element Configuration :
- Dual
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 6.4m Ω @ 13A, 10V
- Terminal Finish :
- Tin (Sn)
- Pbfree Code :
- yes
- Factory Lead Time :
- 12 Weeks
- Max Power Dissipation :
- 2W
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 3.4mm
- FET Feature :
- Logic Level Gate
- ECCN Code :
- EAR99
- Drain to Source Breakdown Voltage :
- 30V
- Turn On Delay Time :
- 6 ns
- Nominal Vgs :
- 1.7 V
- Length :
- 3.4mm
- Number of Pins :
- 8
- Lead Free :
- Lead Free
- Threshold Voltage :
- 1.7V
- Mount :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 827pF @ 15V
- Rise Time :
- 5ns
- Power Dissipation :
- 2W
- Power - Max :
- 800mW 900mW
- Continuous Drain Current (ID) :
- 55A
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~150°C TJ
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Height :
- 750μm
- Turn-Off Delay Time :
- 30 ns
- FET Type :
- 2 N-Channel (Dual)
- Number of Elements :
- 2
- Datasheets
- FDPC8013S
FDPC8013S Documents

FDPC8013S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDPC8013S Description
The device includes two specialized N-channel MOSFET in the dual package. The switch nodes are connected internally for easy placement and wiring of synchronous step-down converters. The control of MOSFET (Q1) and synchronous field effect transistor (Q2) is designed to provide optimal power efficiency.
FDPC8013S Features
Q1 N-Channel
Max. RDS(on) = 9.6 m|? at VGS = 4.5 V, ID = 10 A
Q2 N-Channel
Max. RDS(on) = 2.7 m|? at VGS = 4.5 V, ID = 22 A
Low inductance packaging shortens rise/fall times, resulting in lower switching losses
MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
RoHS Compliant
FDPC8013S Applications
Distribution
Other Wired Communications
Computing
Communications
General Purpose Point of Load
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