FDPC8013S

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Mfr.Part #
FDPC8013S
Manufacturer
onsemi
Package / Case
8-PowerWDFN
Datasheet
Download
Description
MOSFET 2N-CH 30V 13A/26A 3.3MM
Stock
5,056
In Stock :
5,056

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Arrays
Fall Time (Typ) :
4 ns
Published :
2009
Gate Charge (Qg) (Max) @ Vgs :
13nC @ 10V
Vgs(th) (Max) @ Id :
3V @ 250µA
Weight :
192mg
REACH SVHC :
No SVHC
Gate to Source Voltage (Vgs) :
20V
Series :
PowerTrench®
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Package / Case :
8-PowerWDFN
Packaging :
Digi-Reel®
RoHS Status :
ROHS3 Compliant
Current - Continuous Drain (Id) @ 25°C :
13A 26A
Element Configuration :
Dual
Mounting Type :
Surface Mount
Rds On (Max) @ Id, Vgs :
6.4m Ω @ 13A, 10V
Terminal Finish :
Tin (Sn)
Pbfree Code :
yes
Factory Lead Time :
12 Weeks
Max Power Dissipation :
2W
Radiation Hardening :
No
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Width :
3.4mm
FET Feature :
Logic Level Gate
ECCN Code :
EAR99
Drain to Source Breakdown Voltage :
30V
Turn On Delay Time :
6 ns
Nominal Vgs :
1.7 V
Length :
3.4mm
Number of Pins :
8
Lead Free :
Lead Free
Threshold Voltage :
1.7V
Mount :
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds :
827pF @ 15V
Rise Time :
5ns
Power Dissipation :
2W
Power - Max :
800mW 900mW
Continuous Drain Current (ID) :
55A
JESD-609 Code :
e3
Operating Temperature :
-55°C~150°C TJ
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Height :
750μm
Turn-Off Delay Time :
30 ns
FET Type :
2 N-Channel (Dual)
Number of Elements :
2
Introducing Transistors - FETs, MOSFETs - Arrays onsemi FDPC8013S from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:8-PowerWDFN, Mounting Type:Surface Mount, Number of Pins:8, Operating Temperature:-55°C~150°C TJ, FDPC8013S pinout, FDPC8013S datasheet PDF, FDPC8013S amp .Beyond Transistors - FETs, MOSFETs - Arrays onsemi FDPC8013S ,we also offer SSM6N57NU,LF, DMN2004DMK-7, AO4629, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDPC8013S


FDPC8013S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at

FDPC8013S       Description


  The device includes two specialized N-channel MOSFET in the dual package. The switch nodes are connected internally for easy placement and wiring of synchronous step-down converters. The control of MOSFET (Q1) and synchronous field effect transistor (Q2) is designed to provide optimal power efficiency.


FDPC8013S      Features

 

Q1 N-Channel

Max. RDS(on) = 9.6 m|? at VGS = 4.5 V, ID = 10 A

Q2 N-Channel

Max. RDS(on) = 2.7 m|? at VGS = 4.5 V, ID = 22 A

Low inductance packaging shortens rise/fall times, resulting in lower switching losses

MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing

RoHS Compliant


FDPC8013S             Applications


Distribution

Other Wired Communications

Computing

Communications

General Purpose Point of Load

 

 

 





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