FDPC5018SG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Feature :

Standard

Number of Terminations :

8

Vgs(th) (Max) @ Id :

3V @ 250µA

FET Type :

2 N-Channel (Dual) Asymmetrical

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

1715pF @ 15V

Terminal Form :

NO LEAD

Weight :

207.7333mg

Drain-source On Resistance-Max :

0.005ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Reach Compliance Code :

not_compliant

Max Power Dissipation :

1.1W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Configuration :

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Rds On (Max) @ Id, Vgs :

5m Ω @ 17A, 10V

DS Breakdown Voltage-Min :

30V

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Tin (Sn)

Number of Elements :

2

Power - Max :

1W 1.1W

Continuous Drain Current (ID) :

32A

Pbfree Code :

yes

Factory Lead Time :

23 Weeks

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

17A

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Series :

PowerTrench®

Number of Pins :

8

Feedback Cap-Max (Crss) :

60 pF

Package / Case :

8-PowerWDFN

Current - Continuous Drain (Id) @ 25°C :

17A 32A

ECCN Code :

EAR99