FDPC5030SG
- Mfr.Part #
- FDPC5030SG
- Manufacturer
- onsemi
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- MOSFET 2N-CH 30V PWRCLIP56
- Stock
- 6,246
- In Stock :
- 6,246
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Weight :
- 207.7333mg
- FET Feature :
- Standard
- Published :
- 2017
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Series :
- PowerTrench®
- Current - Continuous Drain (Id) @ 25°C :
- 17A 25A
- Input Capacitance (Ciss) (Max) @ Vds :
- 1715pF @ 15V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 1.1W
- Drain to Source Voltage (Vdss) :
- 30V
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Reach Compliance Code :
- not_compliant
- Number of Pins :
- 8
- Rds On (Max) @ Id, Vgs :
- 5m Ω @ 17A, 10V
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 23 Weeks
- ECCN Code :
- EAR99
- Power - Max :
- 1W 1.1W
- Continuous Drain Current (ID) :
- 25A
- Terminal Finish :
- Tin (Sn)
- Pbfree Code :
- yes
- Mount :
- Surface Mount
- Package / Case :
- 8-PowerWDFN
- Gate Charge (Qg) (Max) @ Vgs :
- 24nC @ 10V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Operating Temperature :
- -55°C~150°C TJ
- FET Type :
- 2 N-Channel (Dual) Asymmetrical
- Datasheets
- FDPC5030SG
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FDPC5030SG datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDPC5030SG Description
The device includes two specialized N-channel MOSFET in the dual package. The switch node is connected internally to facilitate the placement and wiring of the synchronous step-down converter. The control of MOSFET (Q1) and synchronous FET (Q2) is designed to provide optimal power efficiency.
FDPC5030SG Features
Q1 N-Channel
Max. RDS(on) = 5.0 m|? at VGS = 10 V, ID = 17 A
Max. RDS(on) = 6.5 m|? at VGS = 4.5 V, ID = 14 A
Q2 N-Channel
Max. RDS(on) = 2.4 m|? at VGS = 10 V, ID = 25 A
Max. RDS(on) = 3.0 m|? at VGS = 4.5 V, ID = 22 A
Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses
MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing
RoHS Compliant
FDPC5030SG Applications
Computing
Communications
General Purpose Point of Load
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