FDPC8014S
- Mfr.Part #
- FDPC8014S
- Manufacturer
- onsemi
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- MOSFET 2N-CH 25V 8PWRCLIP
- Stock
- 14,815
- In Stock :
- 14,815
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Rds On (Max) @ Id, Vgs :
- 3.8m Ω @ 20A, 10V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Reach Compliance Code :
- not_compliant
- Terminal Form :
- NO LEAD
- Package / Case :
- 8-PowerWDFN
- Drain Current-Max (Abs) (ID) :
- 110A
- Series :
- PowerTrench®
- Contact Plating :
- Tin
- Pulsed Drain Current-Max (IDM) :
- 75A
- Drain to Source Voltage (Vdss) :
- 25V
- Fall Time (Typ) :
- 4 ns
- Number of Channels :
- 2
- Case Connection :
- DRAIN
- Current - Continuous Drain (Id) @ 25°C :
- 20A 41A
- Operating Mode :
- ENHANCEMENT MODE
- FET Feature :
- Logic Level Gate
- Turn On Delay Time :
- 16 ns
- Continuous Drain Current (ID) :
- 41A
- Width :
- 6.1mm
- Published :
- 2017
- Number of Elements :
- 2
- Turn-Off Delay Time :
- 47 ns
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power - Max :
- 2.1W 2.3W
- Rise Time :
- 6ns
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Gate to Source Voltage (Vgs) :
- 12V
- Factory Lead Time :
- 23 Weeks
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Pins :
- 8
- Gate Charge (Qg) (Max) @ Vgs :
- 35nC @ 10V
- Weight :
- 207.7333mg
- Height :
- 750μm
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Packaging :
- Tape and Reel (TR)
- Max Power Dissipation :
- 2.3W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 2375pF @ 13V
- Length :
- 5.1mm
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Avalanche Energy Rating (Eas) :
- 73 mJ
- FET Type :
- 2 N-Channel (Dual) Asymmetrical
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 8
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Datasheets
- FDPC8014S
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FDPC8014S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDPC8014S Description
The device includes two specialized N-channel MOSFET in the dual package. The switch nodes are connected internally for easy placement and wiring of synchronous step-down converters. The control of MOSFET (Q1) and synchronous SyncFETTM devices (Q2) is designed to provide optimal power efficiency.
FDPC8014S Features
Q1 N-Channel
Max. RDS(on) = 3.8 m|? at VGS = 10 V, ID = 20 A
Max. RDS(on) = 4.7 m|? at VGS = 4.5 V, ID = 18 A
Q2 N-Channel
Max. RDS(on) = 1.2 m|? at VGS = 10 V, ID = 41 A
Max. RDS(on) = 1.4 m|? at VGS = 4.5 V, ID = 37 A
Low inductance packaging shortens rise/fall times, resulting in lower switching losses
MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
RoHS Compliant
FDPC8014S Applications
Computing
Communications
General Purpose Point of Load
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