FDPC8012S
- Mfr.Part #
- FDPC8012S
- Manufacturer
- onsemi
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- MOSFET 2N-CH 25V 13A/26A PWR CLP
- Stock
- 4
- In Stock :
- 4
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Fall Time (Typ) :
- 3 ns
- Transistor Application :
- SWITCHING
- Turn-Off Delay Time :
- 34 ns
- Rds On (Max) @ Id, Vgs :
- 7m Ω @ 12A, 4.5V
- Current - Continuous Drain (Id) @ 25°C :
- 13A 26A
- Drain to Source Breakdown Voltage :
- 25V
- FET Type :
- 2 N-Channel (Dual) Asymmetrical
- Operating Temperature :
- -55°C~150°C TJ
- Drain-source On Resistance-Max :
- 0.007Ohm
- Height :
- 725μm
- Max Power Dissipation :
- 2W
- Factory Lead Time :
- 12 Weeks
- Number of Terminations :
- 8
- Drain Current-Max (Abs) (ID) :
- 13A
- Configuration :
- SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
- JEDEC-95 Code :
- MO-240BA
- ECCN Code :
- EAR99
- Series :
- PowerTrench®
- JESD-609 Code :
- e3
- Mount :
- Surface Mount
- Power - Max :
- 800mW 900mW
- Gate to Source Voltage (Vgs) :
- 12V
- Gate Charge (Qg) (Max) @ Vgs :
- 8nC @ 4.5V
- Rise Time :
- 3ns
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- 8-PowerWDFN
- Input Capacitance (Ciss) (Max) @ Vds :
- 1075pF @ 13V
- Vgs(th) (Max) @ Id :
- 2.2V @ 250µA
- Continuous Drain Current (ID) :
- 88A
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Length :
- 3.3mm
- Published :
- 2010
- FET Feature :
- Logic Level Gate
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Width :
- 3.3mm
- RoHS Status :
- ROHS3 Compliant
- Weight :
- 192mg
- Number of Pins :
- 8
- Number of Elements :
- 2
- Pbfree Code :
- yes
- Terminal Finish :
- Tin (Sn)
- Mounting Type :
- Surface Mount
- Datasheets
- FDPC8012S
FDPC8012S Documents

FDPC8012S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDPC8012S Description
The device includes two specialized N-channel MOSFET in the dual package. The switch nodes are connected internally for easy placement and wiring of synchronous step-down converters. The control of MOSFET (Q1) and synchronous FET (Q2) is designed to provide optimal power efficiency.
FDPC8012S Features
Q1 N-Channel
Max. RDS(on) = 7.0 m|? at VGS = 4.5 V, ID = 12 A
Q2 N-Channel
Max. RDS(on) = 2.2 m|? at VGS = 4.5 V, ID = 23 A
Low inductance packaging shortens rise/fall times, resulting in lower switching losses
MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
RoHS Compliant
FDPC8012S Applications
Server
Computing
Communications
General Purpose Point of Load
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