FDPC8012S

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Continuous Drain Current (ID) :

88A

Input Capacitance (Ciss) (Max) @ Vds :

1075pF @ 13V

Drain Current-Max (Abs) (ID) :

13A

Number of Pins :

8

Gate to Source Voltage (Vgs) :

12V

Factory Lead Time :

12 Weeks

Drain-source On Resistance-Max :

0.007Ohm

Max Power Dissipation :

2W

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Vgs(th) (Max) @ Id :

2.2V @ 250µA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rise Time :

3ns

Transistor Application :

SWITCHING

Published :

2010

Terminal Finish :

Tin (Sn)

Configuration :

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

Number of Elements :

2

Radiation Hardening :

No

Height :

725μm

Series :

PowerTrench®

Rds On (Max) @ Id, Vgs :

7m Ω @ 12A, 4.5V

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Width :

3.3mm

Pbfree Code :

yes

Weight :

192mg

Current - Continuous Drain (Id) @ 25°C :

13A 26A

Fall Time (Typ) :

3 ns

Length :

3.3mm

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 4.5V

Number of Terminations :

8

JEDEC-95 Code :

MO-240BA

Mounting Type :

Surface Mount

Package / Case :

8-PowerWDFN

JESD-609 Code :

e3

FET Feature :

Logic Level Gate

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

34 ns

Power - Max :

800mW 900mW

Drain to Source Breakdown Voltage :

25V

Operating Mode :

ENHANCEMENT MODE

FET Type :

2 N-Channel (Dual) Asymmetrical

Moisture Sensitivity Level (MSL) :

1 (Unlimited)