FDPC8011S

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Mfr.Part #
FDPC8011S
Manufacturer
onsemi
Package / Case
Datasheet
Download
Description
MOSFET 2N-CH 25V 13A/27A 8PQFN
Stock
3,000
In Stock :
3,000

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Arrays
Continuous Drain Current (ID) :
27A
Length :
3.4mm
Weight :
192mg
Threshold Voltage :
1.4V
Turn-Off Delay Time :
38 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Radiation Hardening :
No
Drain Current-Max (Abs) (ID) :
13A
Fall Time (Typ) :
4 ns
Rds On Max :
6 mΩ
Drain to Source Breakdown Voltage :
25V
Input Capacitance :
1.24nF
JESD-609 Code :
e3
REACH SVHC :
No SVHC
Height :
800μm
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Pbfree Code :
yes
Gate to Source Voltage (Vgs) :
12V
Power Dissipation :
2W
Number of Pins :
8
Packaging :
Tape and Reel (TR)
Width :
3.4mm
Mount :
Surface Mount
Factory Lead Time :
12 Weeks
Nominal Vgs :
1.4 V
Max Power Dissipation :
900mW
Drain to Source Voltage (Vdss) :
25V
Drain to Source Resistance :
1.2mOhm
Transistor Application :
SWITCHING
Number of Terminations :
8
ECCN Code :
EAR99
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Max Operating Temperature :
150°C
Polarity/Channel Type :
N-Channel
Lead Free :
Lead Free
Element Configuration :
Dual
Number of Elements :
2
Operating Mode :
ENHANCEMENT MODE
RoHS Status :
ROHS3 Compliant
Min Operating Temperature :
-55°C
Rise Time :
5ns
Terminal Finish :
Tin (Sn)
Datasheets
FDPC8011S
Introducing Transistors - FETs, MOSFETs - Arrays onsemi FDPC8011S from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:8, Number of Terminations:8, FDPC8011S pinout, FDPC8011S datasheet PDF, FDPC8011S amp .Beyond Transistors - FETs, MOSFETs - Arrays onsemi FDPC8011S ,we also offer SSM6N57NU,LF, DMN2004DMK-7, AO4629, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDPC8011S


FDPC8011S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at

FDPC8011S          Description


  The device includes two specialized N-channel MOSFET in the dual package. The switch nodes are connected internally for easy placement and wiring of synchronous step-down converters. The control of MOSFET (Q1) and synchronous FET (Q2) is designed to provide optimal power efficiency.


FDPC8011S     Features

 

Q1 N-Channel

Max. RDS(on) = 7.3 m|? at VGS = 4.5 V, ID = 12 A

Q2 N-Channel

Max. RDS(on) = 2.1 m|? at VGS = 4.5 V, ID = 12 A

Low inductance packaging shortens rise/fall times, resulting in lower switching losses

MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing

RoHS Compliant


FDPC8011S                 Applications 


Server

Computing

Communications

General Purpose Point of Load

 

 



 



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