FDPC8011S
- Mfr.Part #
- FDPC8011S
- Manufacturer
- onsemi
- Package / Case
- Datasheet
- Download
- Description
- MOSFET 2N-CH 25V 13A/27A 8PQFN
- Stock
- 3,000
- In Stock :
- 3,000
Request A Quote(RFQ)
- * Fullname:
- * Company:
- * E-Mail:
- Phone:
- Comment:
- * Quantity:
- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Continuous Drain Current (ID) :
- 27A
- JESD-609 Code :
- e3
- Number of Pins :
- 8
- Height :
- 800μm
- Radiation Hardening :
- No
- Weight :
- 192mg
- Polarity/Channel Type :
- N-Channel
- Nominal Vgs :
- 1.4 V
- Lead Free :
- Lead Free
- Max Operating Temperature :
- 150°C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 2
- Factory Lead Time :
- 12 Weeks
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Drain to Source Resistance :
- 1.2mOhm
- Drain to Source Voltage (Vdss) :
- 25V
- Drain to Source Breakdown Voltage :
- 25V
- Threshold Voltage :
- 1.4V
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- REACH SVHC :
- No SVHC
- Element Configuration :
- Dual
- Turn-Off Delay Time :
- 38 ns
- Max Power Dissipation :
- 900mW
- Length :
- 3.4mm
- Fall Time (Typ) :
- 4 ns
- Power Dissipation :
- 2W
- Pbfree Code :
- yes
- Number of Terminations :
- 8
- Drain Current-Max (Abs) (ID) :
- 13A
- Gate to Source Voltage (Vgs) :
- 12V
- Width :
- 3.4mm
- Input Capacitance :
- 1.24nF
- Transistor Application :
- SWITCHING
- Rise Time :
- 5ns
- Rds On Max :
- 6 mΩ
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Min Operating Temperature :
- -55°C
- Terminal Finish :
- Tin (Sn)
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- FDPC8011S
FDPC8011S Documents

FDPC8011S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDPC8011S Description
The device includes two specialized N-channel MOSFET in the dual package. The switch nodes are connected internally for easy placement and wiring of synchronous step-down converters. The control of MOSFET (Q1) and synchronous FET (Q2) is designed to provide optimal power efficiency.
FDPC8011S Features
Q1 N-Channel
Max. RDS(on) = 7.3 m|? at VGS = 4.5 V, ID = 12 A
Q2 N-Channel
Max. RDS(on) = 2.1 m|? at VGS = 4.5 V, ID = 12 A
Low inductance packaging shortens rise/fall times, resulting in lower switching losses
MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
RoHS Compliant
FDPC8011S Applications
Server
Computing
Communications
General Purpose Point of Load
You may place an order without registering to Chip IC. We strongly recommend that you log in before purchasing as you can track your order at any time.
RFQ (Request for Quotations)It is recommended to send RFQ to get the latest prices and stock availability about the part.Our sales will reply to your inquiry within 24 hours.
Payment MethodFor your convenience, we accept multiple payment methods in USD, Such as:PayPal, Credit Card, and wire transfer.
IMPORTANT NOTICEYou may place an order without registering to 1. You'll receive an order confirmations by e-mail soon . (Please remember to check the spam box if you didn't hear from us). 2. Since stock availability and prices may change at any time, the sales will reconfirm the order details and update you at soonest time.
Most of our products are shipped via FEDEX,DHL,UPS and SF EXPRESS...
Shipping CostShipping Cost starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).If customer have shipping account, we can make shipment under customer’s shipping account with freight collect directly.
The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose. You can track it by the tracking no.
Manufacturer related products
Catalog related products
Related products
| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| FDPC1002S | onsemi | 10,941 | POWER FIELD-EFFECT TRANSISTOR, 1 |
| FDPC1002S | onsemi | 43,370 | MOSFET |
| FDPC1012S | onsemi | 77 | POWER FIELD-EFFECT TRANSISTOR |
| FDPC3D5N025X9D | onsemi | 10,554 | MOSFET 2 N-CH 25V 74A 12-PQFN |
| FDPC4044 | onsemi | 41,475 | MOSFET 2N-CH 8MLP |
| FDPC4044-P | onsemi | 42,401 | MOSFET N-CHANNEL 8MLP |
| FDPC5018SG | onsemi | 26,190 | MOSFET 2N-CH 30V PWRCLIP56 |
| FDPC5030SG | onsemi | 6,246 | MOSFET 2N-CH 30V PWRCLIP56 |
| FDPC8011S-AU01 | onsemi | 3,000 | PT8 N 25/12 & PT8 N 25/12 |
| FDPC8012S | onsemi | 4 | MOSFET 2N-CH 25V 13A/26A PWR CLP |
| FDPC8013S | onsemi | 5,056 | MOSFET 2N-CH 30V 13A/26A 3.3MM |
| FDPC8014AS | onsemi | 2,043 | 25V ASYMMETRIC DUAL N-CHANNEL PO |
| FDPC8014AS | onsemi | 2,043 | MOSFET 2N-CH 25V 20A/40A |
| FDPC8014S | onsemi | 14,815 | MOSFET 2N-CH 25V 8PWRCLIP |
| FDPC8016S | onsemi | 1 | MOSFET 2N-CH 25V 8PWRCLIP |
















