FDPC8011S
- Mfr.Part #
- FDPC8011S
- Manufacturer
- onsemi
- Package / Case
- Datasheet
- Download
- Description
- MOSFET 2N-CH 25V 13A/27A 8PQFN
- Stock
- 3,000
- In Stock :
- 3,000
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Continuous Drain Current (ID) :
- 27A
- Length :
- 3.4mm
- Weight :
- 192mg
- Threshold Voltage :
- 1.4V
- Turn-Off Delay Time :
- 38 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Drain Current-Max (Abs) (ID) :
- 13A
- Fall Time (Typ) :
- 4 ns
- Rds On Max :
- 6 mΩ
- Drain to Source Breakdown Voltage :
- 25V
- Input Capacitance :
- 1.24nF
- JESD-609 Code :
- e3
- REACH SVHC :
- No SVHC
- Height :
- 800μm
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Pbfree Code :
- yes
- Gate to Source Voltage (Vgs) :
- 12V
- Power Dissipation :
- 2W
- Number of Pins :
- 8
- Packaging :
- Tape and Reel (TR)
- Width :
- 3.4mm
- Mount :
- Surface Mount
- Factory Lead Time :
- 12 Weeks
- Nominal Vgs :
- 1.4 V
- Max Power Dissipation :
- 900mW
- Drain to Source Voltage (Vdss) :
- 25V
- Drain to Source Resistance :
- 1.2mOhm
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 8
- ECCN Code :
- EAR99
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Max Operating Temperature :
- 150°C
- Polarity/Channel Type :
- N-Channel
- Lead Free :
- Lead Free
- Element Configuration :
- Dual
- Number of Elements :
- 2
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- ROHS3 Compliant
- Min Operating Temperature :
- -55°C
- Rise Time :
- 5ns
- Terminal Finish :
- Tin (Sn)
- Datasheets
- FDPC8011S

FDPC8011S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDPC8011S Description
The device includes two specialized N-channel MOSFET in the dual package. The switch nodes are connected internally for easy placement and wiring of synchronous step-down converters. The control of MOSFET (Q1) and synchronous FET (Q2) is designed to provide optimal power efficiency.
FDPC8011S Features
Q1 N-Channel
Max. RDS(on) = 7.3 m|? at VGS = 4.5 V, ID = 12 A
Q2 N-Channel
Max. RDS(on) = 2.1 m|? at VGS = 4.5 V, ID = 12 A
Low inductance packaging shortens rise/fall times, resulting in lower switching losses
MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
RoHS Compliant
FDPC8011S Applications
Server
Computing
Communications
General Purpose Point of Load
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