FDP5N60NZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

35 ns

Transistor Element Material :

SILICON

Width :

4.7mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pbfree Code :

yes

JESD-609 Code :

e3

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

600pF @ 25V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

2Ohm

Turn On Delay Time :

15 ns

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Fall Time (Typ) :

20 ns

Power Dissipation :

100W

ECCN Code :

EAR99

Height :

16.3mm

JEDEC-95 Code :

TO-220AB

FET Type :

N-Channel

Weight :

1.8g

Gate to Source Voltage (Vgs) :

25V

Package / Case :

TO-220-3

Vgs(th) (Max) @ Id :

5V @ 250μA

Operating Temperature :

-55°C~150°C TJ

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

4.5A Tc

Rds On (Max) @ Id, Vgs :

2 Ω @ 2.25A, 10V

Factory Lead Time :

5 Weeks

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

10.67mm

Element Configuration :

Single

Mount :

Through Hole

Continuous Drain Current (ID) :

4.5A

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±25V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rise Time :

20ns

Power Dissipation-Max :

100W Tc

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Published :

2013

Number of Elements :

1

Terminal Finish :

Tin (Sn)

Drain to Source Breakdown Voltage :

600V

Series :

UniFET-II™

Mounting Type :

Through Hole