FDP5N50
- Mfr.Part #
- FDP5N50
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 5A TO220-3
- Stock
- 13,368
- In Stock :
- 13,368
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation :
- 78W
- Rise Time :
- 22ns
- Lead Free :
- Lead Free
- Weight :
- 1.8g
- JESD-609 Code :
- e3
- Turn-Off Delay Time :
- 28 ns
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Qualification Status :
- Not Qualified
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Fall Time (Typ) :
- 21 ns
- Length :
- 10.67mm
- Height :
- 16.3mm
- Element Configuration :
- Single
- Number of Pins :
- 3
- FET Type :
- N-Channel
- Factory Lead Time :
- 4 Weeks
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max :
- 78W Tc
- Vgs (Max) :
- ±25V
- Rds On (Max) @ Id, Vgs :
- 1.5 Ω @ 2.25A, 10V
- Series :
- UniFET-II™
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Width :
- 4.7mm
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Package / Case :
- TO-220-3
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Terminal Finish :
- Tin (Sn)
- Gate to Source Voltage (Vgs) :
- 25V
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2013
- Mount :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 440pF @ 25V
- Turn On Delay Time :
- 12 ns
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tube
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Terminations :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 12nC @ 10V
- Drain to Source Breakdown Voltage :
- 500V
- JEDEC-95 Code :
- TO-220AB
- Continuous Drain Current (ID) :
- 4.5A
- Current - Continuous Drain (Id) @ 25°C :
- 4.5A Tc
- Datasheets
- FDP5N50

N-Channel Tube 1.5 Ω @ 2.25A, 10V ±25V 440pF @ 25V 12nC @ 10V TO-220-3
FDP5N50NZ Description
The high voltage UniFETTM II MOSFET series from Fairchild Semiconductor is built on cutting-edge planar stripe and DMOS technology. This cutting-edge MOSFET series offers greater switching performance, higher avalanche energy strength, and the lowest on-state resistance among planar MOSFET. UniFET II MOSFET can endure over 2kV HBM surge stress thanks to an inbuilt gate-source ESD diode as well. For switching power converter applications such power factor correction (PFC), flat panel display (FPD) TV power, ATX, and electronic lamp ballasts, this device family is appropriate.
FDP5N50NZ Features
?VGS = 10 V, lD = 2.25 A, R DS(on)= 1-38 Q (Typ. ),
? Minimal Gate Fee (Typ. 9 nC)
?Low Crash CTyp.4pF)
?Avalanche tested in full
?More effective dv/dt capability
?Improved ESD Capability
? RoHS conformant
FDP5N50NZ Applications
?LED/LCD TV
?Lighting
?A backup power supply
?Power Supply, AC-DC
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