FDP5N50
- Mfr.Part #
- FDP5N50
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 5A TO220-3
- Stock
- 13,368
- In Stock :
- 13,368
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Element Configuration :
- Single
- Published :
- 2013
- JEDEC-95 Code :
- TO-220AB
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Rds On (Max) @ Id, Vgs :
- 1.5 Ω @ 2.25A, 10V
- Factory Lead Time :
- 4 Weeks
- Rise Time :
- 22ns
- Power Dissipation :
- 78W
- Turn-Off Delay Time :
- 28 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Drain to Source Breakdown Voltage :
- 500V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Turn On Delay Time :
- 12 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Qualification Status :
- Not Qualified
- Weight :
- 1.8g
- Current - Continuous Drain (Id) @ 25°C :
- 4.5A Tc
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-220-3
- Series :
- UniFET-II™
- Number of Pins :
- 3
- Continuous Drain Current (ID) :
- 4.5A
- Terminal Finish :
- Tin (Sn)
- Pbfree Code :
- yes
- Fall Time (Typ) :
- 21 ns
- Width :
- 4.7mm
- Gate to Source Voltage (Vgs) :
- 25V
- Input Capacitance (Ciss) (Max) @ Vds :
- 440pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 78W Tc
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- Mount :
- Through Hole
- Height :
- 16.3mm
- JESD-609 Code :
- e3
- Operating Mode :
- ENHANCEMENT MODE
- Length :
- 10.67mm
- Vgs (Max) :
- ±25V
- Packaging :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 12nC @ 10V
- Lead Free :
- Lead Free
- Datasheets
- FDP5N50
FDP5N50 Documents

N-Channel Tube 1.5 Ω @ 2.25A, 10V ±25V 440pF @ 25V 12nC @ 10V TO-220-3
FDP5N50NZ Description
The high voltage UniFETTM II MOSFET series from Fairchild Semiconductor is built on cutting-edge planar stripe and DMOS technology. This cutting-edge MOSFET series offers greater switching performance, higher avalanche energy strength, and the lowest on-state resistance among planar MOSFET. UniFET II MOSFET can endure over 2kV HBM surge stress thanks to an inbuilt gate-source ESD diode as well. For switching power converter applications such power factor correction (PFC), flat panel display (FPD) TV power, ATX, and electronic lamp ballasts, this device family is appropriate.
FDP5N50NZ Features
?VGS = 10 V, lD = 2.25 A, R DS(on)= 1-38 Q (Typ. ),
? Minimal Gate Fee (Typ. 9 nC)
?Low Crash CTyp.4pF)
?Avalanche tested in full
?More effective dv/dt capability
?Improved ESD Capability
? RoHS conformant
FDP5N50NZ Applications
?LED/LCD TV
?Lighting
?A backup power supply
?Power Supply, AC-DC
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