FDP5N50

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

5V @ 250μA

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 2.25A, 10V

Lead Free :

Lead Free

Fall Time (Typ) :

21 ns

Factory Lead Time :

4 Weeks

Rise Time :

22ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

4.7mm

JEDEC-95 Code :

TO-220AB

Published :

2013

Weight :

1.8g

Turn-Off Delay Time :

28 ns

Packaging :

Tube

Height :

16.3mm

Power Dissipation-Max :

78W Tc

Power Dissipation :

78W

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 25V

Drain to Source Breakdown Voltage :

500V

Transistor Element Material :

SILICON

Vgs (Max) :

±25V

Pbfree Code :

yes

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Package / Case :

TO-220-3

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

4.5A Tc

Terminal Finish :

Tin (Sn)

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Series :

UniFET-II™

Mounting Type :

Through Hole

Number of Pins :

3

Length :

10.67mm

Gate to Source Voltage (Vgs) :

25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Turn On Delay Time :

12 ns

Mount :

Through Hole

Continuous Drain Current (ID) :

4.5A

Qualification Status :

Not Qualified