FDP5N50

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

21 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

4.5A Tc

Series :

UniFET-II™

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 2.25A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Mount :

Through Hole

Turn On Delay Time :

12 ns

Gate to Source Voltage (Vgs) :

25V

Vgs (Max) :

±25V

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Mounting Type :

Through Hole

Lead Free :

Lead Free

Factory Lead Time :

4 Weeks

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 25V

Number of Pins :

3

Power Dissipation-Max :

78W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

4.5A

Element Configuration :

Single

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

5V @ 250μA

Transistor Element Material :

SILICON

Rise Time :

22ns

Published :

2013

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Width :

4.7mm

Weight :

1.8g

Height :

16.3mm

Length :

10.67mm

Turn-Off Delay Time :

28 ns

FET Type :

N-Channel

Terminal Finish :

Tin (Sn)

Power Dissipation :

78W

Qualification Status :

Not Qualified

Packaging :

Tube

JEDEC-95 Code :

TO-220AB

Drain to Source Breakdown Voltage :

500V

Package / Case :

TO-220-3