FDP2D3N10C

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Mfr.Part #
FDP2D3N10C
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 100V 222A TO220-3
Stock
1,323
In Stock :
1,323

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Mount :
Through Hole
FET Type :
N-Channel
RoHS Status :
RoHS Compliant
Element Configuration :
Single
Operating Temperature :
-55°C~175°C TJ
Pbfree Code :
yes
Factory Lead Time :
20 Weeks
Series :
PowerTrench®
Vgs(th) (Max) @ Id :
4V @ 700μA
Mounting Type :
Through Hole
Rds On (Max) @ Id, Vgs :
2.3m Ω @ 100A, 10V
Weight :
1.8g
Power Dissipation-Max :
214W Tc
Drive Voltage (Max Rds On,Min Rds On) :
10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
11180pF @ 50V
Gate Charge (Qg) (Max) @ Vgs :
152nC @ 10V
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
222A Tc
Package / Case :
TO-220-3
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Datasheets
FDP2D3N10C
Introducing Transistors - FETs, MOSFETs - Single onsemi FDP2D3N10C from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Mounting Type:Through Hole, Package / Case:TO-220-3, FDP2D3N10C pinout, FDP2D3N10C datasheet PDF, FDP2D3N10C amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDP2D3N10C ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDP2D3N10C


N-Channel 2.3m Ω @ 100A, 10V ±20V 11180pF @ 50V 152nC @ 10V 100V TO-220-3

FDP2D3N10C IGBT Description


The FDP2D3N10C IGBT is widely used in solar inverters, EVs (electrical vehicles), and HVDC (high voltage, direct current) systems. This IGBT is able to hold a voltage of 1200 V at its Collector-Emitter junction. It also has a Gate-Emitter voltage to ensure situation status and the maximum Collector current would be 80 A @25 ℃.



FDP2D3N10C IGBT Features


  • High power density with Shielded gate technology

  • Max RDS(on) = 2.3 mΩ at VGS = 10 V, ID = 222 A

  • RoHS Compliant

  • Power Density & Shielded Gate

  • Low Vds spike internal snubber function.

  • Low Qrr/Trr

  • Low switching loss

  • Good EMI performance

  • Extremely Low Reverse Recovery Charge, Qrr

  • High Power and Current Handling Capability

  • 100% UIL Tested

  • Soft recovery performance

  • High-Performance Trench Technology for Extremely Low RDS(on)

  • Low Gate Charge, QG = 108nC ( Typ.)



FDP2D3N10C IGBT Applications


  • Server

  • Telecom

  • Synchronous Rectification

  • Micro Solar Inverter

  • Computing

  • Motor Drive

  • Uninterruptible Power Supplies

  • Motor drives and Uninterruptible Power Supplies

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