FDP24N40

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

90ns

Resistance :

175mOhm

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

5V @ 250μA

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

175m Ω @ 12A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn On Delay Time :

40 ns

Gate to Source Voltage (Vgs) :

30V

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

3020pF @ 25V

Length :

10.1mm

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Power Dissipation-Max :

227W Tc

Factory Lead Time :

6 Weeks

Element Configuration :

Single

Width :

4.7mm

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

96A

Turn-Off Delay Time :

110 ns

Fall Time (Typ) :

65 ns

Number of Elements :

1

Package / Case :

TO-220-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

400V

Number of Terminations :

3

Pbfree Code :

yes

Mount :

Through Hole

Height :

15.38mm

Operating Mode :

ENHANCEMENT MODE

Series :

UniFET™

Weight :

1.8g

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

JEDEC-95 Code :

TO-220AB

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tube

Vgs (Max) :

±30V

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Continuous Drain Current (ID) :

24A

FET Type :

N-Channel

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Published :

2013

Power Dissipation :

227W

Number of Pins :

3