FDP24N40

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

FET Type :

N-Channel

Power Dissipation-Max :

227W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rise Time :

90ns

Factory Lead Time :

6 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Turn On Delay Time :

40 ns

Length :

10.1mm

Number of Elements :

1

Qualification Status :

Not Qualified

Pbfree Code :

yes

Width :

4.7mm

Resistance :

175mOhm

JESD-609 Code :

e3

Number of Pins :

3

Turn-Off Delay Time :

110 ns

Packaging :

Tube

Package / Case :

TO-220-3

Vgs(th) (Max) @ Id :

5V @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

65 ns

Gate to Source Voltage (Vgs) :

30V

Power Dissipation :

227W

Transistor Application :

SWITCHING

Vgs (Max) :

±30V

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Number of Terminations :

3

Published :

2013

Continuous Drain Current (ID) :

24A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

175m Ω @ 12A, 10V

Height :

15.38mm

Input Capacitance (Ciss) (Max) @ Vds :

3020pF @ 25V

Element Configuration :

Single

Transistor Element Material :

SILICON

Series :

UniFET™

Weight :

1.8g

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Pulsed Drain Current-Max (IDM) :

96A

JEDEC-95 Code :

TO-220AB

Operating Temperature :

-55°C~150°C TJ

Mount :

Through Hole

Drain to Source Breakdown Voltage :

400V

Lead Free :

Lead Free