FDP20N50

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

9.4mm

Power Dissipation :

250W

Contact Plating :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-220-3

JEDEC-95 Code :

TO-220AB

ECCN Code :

EAR99

Mounting Type :

Through Hole

Rise Time :

375ns

Power Dissipation-Max :

250W Tc

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Mount :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

Drain to Source Breakdown Voltage :

500V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Radiation Hardening :

No

Transistor Element Material :

SILICON

Number of Pins :

3

Series :

UniFET™

Pulsed Drain Current-Max (IDM) :

80A

Turn-Off Delay Time :

100 ns

FET Type :

N-Channel

Turn On Delay Time :

95 ns

Published :

2004

Element Configuration :

Single

Continuous Drain Current (ID) :

20A

Number of Terminations :

3

Gate to Source Voltage (Vgs) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

3120pF @ 25V

REACH SVHC :

No SVHC

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Vgs(th) (Max) @ Id :

5V @ 250μA

Threshold Voltage :

5V

Additional Feature :

AVALANCHE RATED

Gate Charge (Qg) (Max) @ Vgs :

59.5nC @ 10V

Weight :

1.8g

Number of Elements :

1

Width :

4.7mm

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±30V

Fall Time (Typ) :

105 ns

Factory Lead Time :

9 Weeks

Rds On (Max) @ Id, Vgs :

230m Ω @ 10A, 10V

Transistor Application :

SWITCHING

Resistance :

230mOhm

Length :

10.1mm

Lead Free :

Lead Free