FDP20N50

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

500V

Rise Time :

375ns

Published :

2004

Factory Lead Time :

9 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Input Capacitance (Ciss) (Max) @ Vds :

3120pF @ 25V

Resistance :

230mOhm

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Packaging :

Tube

Contact Plating :

Tin

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

5V @ 250μA

Turn On Delay Time :

95 ns

JEDEC-95 Code :

TO-220AB

Continuous Drain Current (ID) :

20A

Element Configuration :

Single

Fall Time (Typ) :

105 ns

Package / Case :

TO-220-3

Radiation Hardening :

No

Length :

10.1mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Through Hole

Power Dissipation :

250W

Height :

9.4mm

Transistor Element Material :

SILICON

Width :

4.7mm

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

80A

ECCN Code :

EAR99

Vgs (Max) :

±30V

Turn-Off Delay Time :

100 ns

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

Series :

UniFET™

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

230m Ω @ 10A, 10V

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

30V

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Threshold Voltage :

5V

Gate Charge (Qg) (Max) @ Vgs :

59.5nC @ 10V

Mounting Type :

Through Hole

Pbfree Code :

yes

Power Dissipation-Max :

250W Tc

Additional Feature :

AVALANCHE RATED

Weight :

1.8g