FDP20N50

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

AVALANCHE RATED

Pbfree Code :

yes

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

9 Weeks

JESD-609 Code :

e3

Packaging :

Tube

Rise Time :

375ns

Gate to Source Voltage (Vgs) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

3120pF @ 25V

Turn-Off Delay Time :

100 ns

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Length :

10.1mm

Gate Charge (Qg) (Max) @ Vgs :

59.5nC @ 10V

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

Fall Time (Typ) :

105 ns

Power Dissipation-Max :

250W Tc

Series :

UniFET™

Height :

9.4mm

Number of Terminations :

3

Continuous Drain Current (ID) :

20A

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

230m Ω @ 10A, 10V

Resistance :

230mOhm

Drain to Source Breakdown Voltage :

500V

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Width :

4.7mm

Vgs(th) (Max) @ Id :

5V @ 250μA

Lead Free :

Lead Free

Transistor Application :

SWITCHING

FET Type :

N-Channel

Vgs (Max) :

±30V

Element Configuration :

Single

Contact Plating :

Tin

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Power Dissipation :

250W

Number of Pins :

3

ECCN Code :

EAR99

Turn On Delay Time :

95 ns

Published :

2004

Package / Case :

TO-220-3

Number of Elements :

1

Weight :

1.8g

Threshold Voltage :

5V

JEDEC-95 Code :

TO-220AB

Pulsed Drain Current-Max (IDM) :

80A