FDP2670

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Mfr.Part #
FDP2670
Manufacturer
Fairchild Semiconductor
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 200V 19A TO220-3
Stock
36,906
In Stock :
36,906

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Surface Mount :
No
JESD-30 Code :
R-PSFM-T3
Drain Current-Max (Abs) (ID) :
19A
Number of Terminations :
3
JEDEC-95 Code :
TO-220AB
Mounting Type :
Through Hole
Peak Reflow Temperature (Cel) :
Not Applicable
JESD-609 Code :
e3
Configuration :
SINGLE WITH BUILT-IN DIODE
Gate Charge (Qg) (Max) @ Vgs :
38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
1.32pF @ 100V
Operating Mode :
ENHANCEMENT MODE
Rds On (Max) @ Id, Vgs :
130m Ω @ 10A, 10V
Transistor Application :
SWITCHING
Vgs (Max) :
±20V
Transistor Element Material :
SILICON
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
Package / Case :
TO-220-3
Pin Count :
3
Power Dissipation-Max :
93W Tc
Terminal Finish :
MATTE TIN
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Elements :
1
RoHS Status :
ROHS3 Compliant
Pulsed Drain Current-Max (IDM) :
40A
Reach Compliance Code :
Unknown
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
-65°C~175°C TJ
FET Type :
N-Channel
Pbfree Code :
yes
Qualification Status :
COMMERCIAL
DS Breakdown Voltage-Min :
200V
Terminal Position :
Single
Drain-source On Resistance-Max :
0.13Ohm
Drain to Source Voltage (Vdss) :
200V
Packaging :
Tube
Series :
PowerTrench®
Avalanche Energy Rating (Eas) :
375 mJ
Current - Continuous Drain (Id) @ 25°C :
19A Ta
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Datasheets
FDP2670
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDP2670 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-220-3, Operating Temperature:-65°C~175°C TJ, FDP2670 pinout, FDP2670 datasheet PDF, FDP2670 amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDP2670 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FDP2670


N-Channel Tube 130m Ω @ 10A, 10V ±20V 1.32pF @ 100V 38nC @ 10V 200V TO-220-3

FDP2670 Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 375 mJ.A device's maximal input capacitance is 1.32pF @ 100V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 19A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 40A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 200V.This transistor requires a 200V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

FDP2670 Features


the avalanche energy rating (Eas) is 375 mJ
based on its rated peak drain current 40A.
a 200V drain to source voltage (Vdss)


FDP2670 Applications


There are a lot of Rochester Electronics, LLC
FDP2670 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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