FDP20N50F

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

250W Tc

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Drain-source On Resistance-Max :

0.26Ohm

Turn On Delay Time :

45 ns

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Turn-Off Delay Time :

100 ns

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Package / Case :

TO-220-3

Gate to Source Voltage (Vgs) :

30V

Pbfree Code :

yes

Weight :

1.8g

Qualification Status :

Not Qualified

JESD-609 Code :

e3

Number of Pins :

3

Continuous Drain Current (ID) :

20A

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

Number of Terminations :

3

Series :

UniFET™

Mount :

Through Hole

Factory Lead Time :

6 Weeks

Published :

2004

Transistor Element Material :

SILICON

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

120ns

Terminal Finish :

Tin (Sn)

JEDEC-95 Code :

TO-220AB

Rds On (Max) @ Id, Vgs :

260m Ω @ 10A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Through Hole

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

250W

Pulsed Drain Current-Max (IDM) :

80A

Drain to Source Breakdown Voltage :

500V

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

3390pF @ 25V

Fall Time (Typ) :

60 ns

Vgs (Max) :

±30V