FDP20N50F

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

UniFET™

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Through Hole

Rise Time :

120ns

Pulsed Drain Current-Max (IDM) :

80A

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

260m Ω @ 10A, 10V

JEDEC-95 Code :

TO-220AB

Package / Case :

TO-220-3

Current - Continuous Drain (Id) @ 25°C :

20A Tc

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

250W Tc

Factory Lead Time :

6 Weeks

Mounting Type :

Through Hole

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Vgs (Max) :

±30V

Published :

2004

Turn On Delay Time :

45 ns

Terminal Finish :

Tin (Sn)

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Elements :

1

Packaging :

Tube

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Drain-source On Resistance-Max :

0.26Ohm

Input Capacitance (Ciss) (Max) @ Vds :

3390pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

20A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Power Dissipation :

250W

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Element Configuration :

Single

Drain to Source Breakdown Voltage :

500V

Fall Time (Typ) :

60 ns

Turn-Off Delay Time :

100 ns

REACH SVHC :

No SVHC

Weight :

1.8g

Qualification Status :

Not Qualified