FDP20N50F

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-220-3

Number of Terminations :

3

Power Dissipation-Max :

250W Tc

Terminal Finish :

Tin (Sn)

Mounting Type :

Through Hole

Packaging :

Tube

ECCN Code :

EAR99

FET Type :

N-Channel

Transistor Element Material :

SILICON

Mount :

Through Hole

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

3390pF @ 25V

Rds On (Max) @ Id, Vgs :

260m Ω @ 10A, 10V

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Number of Elements :

1

Vgs (Max) :

±30V

Weight :

1.8g

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

REACH SVHC :

No SVHC

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Pulsed Drain Current-Max (IDM) :

80A

Drain to Source Breakdown Voltage :

500V

Published :

2004

Power Dissipation :

250W

Pbfree Code :

yes

Turn-Off Delay Time :

100 ns

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Fall Time (Typ) :

60 ns

RoHS Status :

ROHS3 Compliant

Series :

UniFET™

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.26Ohm

JEDEC-95 Code :

TO-220AB

Factory Lead Time :

6 Weeks

Vgs(th) (Max) @ Id :

5V @ 250μA

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

30V

Element Configuration :

Single

Turn On Delay Time :

45 ns

Rise Time :

120ns

Continuous Drain Current (ID) :

20A

Drive Voltage (Max Rds On,Min Rds On) :

10V