FDP20N50F
- Mfr.Part #
- FDP20N50F
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 20A TO220-3
- Stock
- 17,178
- In Stock :
- 17,178
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- REACH SVHC :
- No SVHC
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Turn On Delay Time :
- 45 ns
- Series :
- UniFET™
- Rds On (Max) @ Id, Vgs :
- 260m Ω @ 10A, 10V
- Pulsed Drain Current-Max (IDM) :
- 80A
- JEDEC-95 Code :
- TO-220AB
- Fall Time (Typ) :
- 60 ns
- Vgs (Max) :
- ±30V
- Weight :
- 1.8g
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 65nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3390pF @ 25V
- Published :
- 2004
- Number of Pins :
- 3
- Number of Elements :
- 1
- Mount :
- Through Hole
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Turn-Off Delay Time :
- 100 ns
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 6 Weeks
- Gate to Source Voltage (Vgs) :
- 30V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Type :
- N-Channel
- Terminal Finish :
- Tin (Sn)
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Drain-source On Resistance-Max :
- 0.26Ohm
- Qualification Status :
- Not Qualified
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Power Dissipation-Max :
- 250W Tc
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Breakdown Voltage :
- 500V
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Package / Case :
- TO-220-3
- Rise Time :
- 120ns
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Power Dissipation :
- 250W
- Continuous Drain Current (ID) :
- 20A
- JESD-609 Code :
- e3
- Datasheets
- FDP20N50F
FDP20N50F Documents

N-Channel Tube 260m Ω @ 10A, 10V ±30V 3390pF @ 25V 65nC @ 10V TO-220-3
FDP20N50F Description
N-channel UniFET? MOSFET FDP20N50F belongs to the family of high-voltage MOSFET family provided by ON Semiconductor based on the planar stripe and DMOS technology. It is specifically designed to provide lower on-state resistance, better switching performance, and higher avalanche energy strength. Due to its reliable performance, it is able to provide considerable benefits for switching power converter applications, including power factor correction (PFC), flat panel display (FPD) TV power, ATX, and electronic lamp ballasts.
FDP20N50F Features
-
Lower on-state resistance
-
Better switching performance
-
Higher avalanche energy strength
-
Improved dv/dt capability
-
Available in the TO-220/TO-220F package
FDP20N50F Applications
-
ATX and electronic lamp ballasts
-
Power factor correction (PFC)
-
Flat-panel display (FPD) TV power
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