FDP20N50F

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±30V

Drain to Source Breakdown Voltage :

500V

Vgs(th) (Max) @ Id :

5V @ 250μA

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Pulsed Drain Current-Max (IDM) :

80A

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Fall Time (Typ) :

60 ns

Turn-Off Delay Time :

100 ns

Power Dissipation :

250W

Number of Pins :

3

Factory Lead Time :

6 Weeks

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

260m Ω @ 10A, 10V

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Input Capacitance (Ciss) (Max) @ Vds :

3390pF @ 25V

Packaging :

Tube

Rise Time :

120ns

Package / Case :

TO-220-3

Weight :

1.8g

Drain-source On Resistance-Max :

0.26Ohm

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

30V

Continuous Drain Current (ID) :

20A

Turn On Delay Time :

45 ns

Terminal Finish :

Tin (Sn)

Mounting Type :

Through Hole

REACH SVHC :

No SVHC

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Number of Elements :

1

JEDEC-95 Code :

TO-220AB

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Element Configuration :

Single

Series :

UniFET™

Power Dissipation-Max :

250W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2004

Qualification Status :

Not Qualified

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Number of Terminations :

3

Mount :

Through Hole

RoHS Status :

ROHS3 Compliant