FDP26N40

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Weight :

1.8g

Drive Voltage (Max Rds On,Min Rds On) :

10V

Length :

10.1mm

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Transistor Element Material :

SILICON

Contact Plating :

Tin

Turn On Delay Time :

45 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

30V

Number of Elements :

1

Power Dissipation-Max :

265W Tc

Element Configuration :

Single

Power Dissipation :

265W

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

26A Tc

Mount :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

66 ns

Additional Feature :

AVALANCHE RATED

Drain to Source Breakdown Voltage :

400V

Transistor Application :

SWITCHING

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

160m Ω @ 13A, 10V

Published :

2013

Radiation Hardening :

No

Factory Lead Time :

5 Weeks

Resistance :

160mOhm

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Turn-Off Delay Time :

115 ns

Pbfree Code :

yes

Height :

15.38mm

Vgs(th) (Max) @ Id :

5V @ 250μA

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

3185pF @ 25V

Width :

4.7mm

Lead Free :

Lead Free

Package / Case :

TO-220-3

Vgs (Max) :

±30V

ECCN Code :

EAR99

Series :

UniFET™

Continuous Drain Current (ID) :

26A

JEDEC-95 Code :

TO-220AB

JESD-609 Code :

e3

Mounting Type :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Rise Time :

100ns