FDP26N40

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Mfr.Part #
FDP26N40
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 400V 26A TO220-3
Stock
13,478
In Stock :
13,478

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Packaging :
Tube
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Lead Free :
Lead Free
Element Configuration :
Single
Turn On Delay Time :
45 ns
Number of Elements :
1
Drain to Source Breakdown Voltage :
400V
Power Dissipation-Max :
265W Tc
Operating Temperature :
-55°C~150°C TJ
Additional Feature :
AVALANCHE RATED
REACH SVHC :
No SVHC
Transistor Application :
SWITCHING
Height :
15.38mm
Gate to Source Voltage (Vgs) :
30V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Weight :
1.8g
Power Dissipation :
265W
JEDEC-95 Code :
TO-220AB
Width :
4.7mm
Length :
10.1mm
Vgs (Max) :
±30V
Factory Lead Time :
5 Weeks
FET Type :
N-Channel
Vgs(th) (Max) @ Id :
5V @ 250μA
Series :
UniFET™
Rise Time :
100ns
Continuous Drain Current (ID) :
26A
Number of Terminations :
3
RoHS Status :
ROHS3 Compliant
Turn-Off Delay Time :
115 ns
Contact Plating :
Tin
Package / Case :
TO-220-3
Current - Continuous Drain (Id) @ 25°C :
26A Tc
Operating Mode :
ENHANCEMENT MODE
Gate Charge (Qg) (Max) @ Vgs :
60nC @ 10V
Pbfree Code :
yes
Transistor Element Material :
SILICON
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Pins :
3
Published :
2013
ECCN Code :
EAR99
Resistance :
160mOhm
Mount :
Through Hole
Input Capacitance (Ciss) (Max) @ Vds :
3185pF @ 25V
Radiation Hardening :
No
Mounting Type :
Through Hole
Rds On (Max) @ Id, Vgs :
160m Ω @ 13A, 10V
Fall Time (Typ) :
66 ns
JESD-609 Code :
e3
Introducing Transistors - FETs, MOSFETs - Single onsemi FDP26N40 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Package / Case:TO-220-3, Number of Pins:3, Mounting Type:Through Hole, FDP26N40 pinout, FDP26N40 datasheet PDF, FDP26N40 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDP26N40 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDP26N40


N-Channel Tube 160m Ω @ 13A, 10V ±30V 3185pF @ 25V 60nC @ 10V TO-220-3

FDP26N40 Description


FDP26N40 IC is a type of UniFET? N-channel MOSFET with high voltage, which is able to provide better switching performance, higher avanlanche engergy strength, and is especially tailored to minimize on-state resistance based on planar stripe and DMOS technology. Moreover, it is able to withstand surge stresses in excess of 2000V HBM based on the internal gate-source ESD diodes. FDP26N40 is designed with excellent reliability in its performance, including the reduction in voltage spikes and overshoot, reduction in junction capacitance and reverse recovery charge, as well as elimination of additional external components, thus ensuring the system features long runtimes. It can be integrated into a variety of industrial-standard and thermally enhanced packages based on advanced silicon technology.


FDP26N40 Features


Planar stripe and DMOS technology
Better switching performance
High avanlanche energy strength
Improved dv/dt capability
Capacity to reduce on-state resistance
Voltage across the gate and source of 400V
Operating and storage temperature range of -55 to +150°C
Mounted in the way of through hole
Available in the TO-220-3 package


FDP26N40 Applications


Power factor correction (PFC)
Flat panel display (FPD) TV power
ATX (advanced technology extended)
Electronic lamp ballasts
Uninterruptible power supplies
AC-DC power supplies
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