FDP26N40

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

REACH SVHC :

No SVHC

Power Dissipation :

265W

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Gate to Source Voltage (Vgs) :

30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Weight :

1.8g

Width :

4.7mm

Lead Free :

Lead Free

Packaging :

Tube

ECCN Code :

EAR99

FET Type :

N-Channel

Number of Elements :

1

Factory Lead Time :

5 Weeks

Continuous Drain Current (ID) :

26A

Operating Temperature :

-55°C~150°C TJ

Height :

15.38mm

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

115 ns

Published :

2013

JESD-609 Code :

e3

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

3185pF @ 25V

Vgs (Max) :

±30V

Series :

UniFET™

Rise Time :

100ns

Fall Time (Typ) :

66 ns

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

45 ns

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Contact Plating :

Tin

Number of Terminations :

3

Vgs(th) (Max) @ Id :

5V @ 250μA

Transistor Application :

SWITCHING

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Power Dissipation-Max :

265W Tc

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

400V

Rds On (Max) @ Id, Vgs :

160m Ω @ 13A, 10V

Additional Feature :

AVALANCHE RATED

Package / Case :

TO-220-3

Current - Continuous Drain (Id) @ 25°C :

26A Tc

Resistance :

160mOhm

JEDEC-95 Code :

TO-220AB

Length :

10.1mm

Number of Pins :

3