FDP2614

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

7230pF @ 25V

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

103 ns

Current - Continuous Drain (Id) @ 25°C :

62A Tc

FET Type :

N-Channel

Package / Case :

TO-220-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Power Dissipation :

260W

Weight :

1.8g

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Packaging :

Tube

Power Dissipation-Max :

260W Tc

Transistor Application :

SWITCHING

Nominal Vgs :

4 V

Mounting Type :

Through Hole

Drain-source On Resistance-Max :

0.027Ohm

JEDEC-95 Code :

TO-220AB

Element Configuration :

Single

Published :

2013

Vgs (Max) :

±30V

Number of Elements :

1

Drain to Source Breakdown Voltage :

200V

Qualification Status :

Not Qualified

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Factory Lead Time :

6 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Fall Time (Typ) :

162 ns

Length :

10.67mm

Continuous Drain Current (ID) :

62A

Turn On Delay Time :

77 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

27m Ω @ 31A, 10V

Height :

16.51mm

Series :

PowerTrench®

Vgs(th) (Max) @ Id :

5V @ 250μA

JESD-609 Code :

e3

REACH SVHC :

No SVHC

Rise Time :

284ns

Width :

4.83mm

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

99nC @ 10V

ECCN Code :

EAR99

Lead Free :

Lead Free

Mount :

Through Hole

Pbfree Code :

yes

Terminal Finish :

Tin (Sn)

Gate to Source Voltage (Vgs) :

30V