FDP2670

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

40A

Drain Current-Max (Abs) (ID) :

19A

Avalanche Energy Rating (Eas) :

375 mJ

JESD-609 Code :

e3

JESD-30 Code :

R-PSFM-T3

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Transistor Element Material :

SILICON

Package / Case :

TO-220-3

FET Type :

N-Channel

Pin Count :

3

JEDEC-95 Code :

TO-220AB

Packaging :

Tube

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

1.32pF @ 100V

Terminal Finish :

MATTE TIN

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

200V

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

200V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.13Ohm

Surface Mount :

No

Reach Compliance Code :

Unknown

Power Dissipation-Max :

93W Tc

Series :

PowerTrench®

Operating Temperature :

-65°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

19A Ta

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

Not Applicable

Qualification Status :

COMMERCIAL

Rds On (Max) @ Id, Vgs :

130m Ω @ 10A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

Terminal Position :

Single