FDP2532

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Threshold Voltage :

4V

Turn-Off Delay Time :

39 ns

Width :

4.83mm

Height :

9.4mm

Number of Elements :

1

Factory Lead Time :

9 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Current - Continuous Drain (Id) @ 25°C :

8A Ta 79A Tc

JEDEC-95 Code :

TO-220AB

Mount :

Through Hole

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

400 mJ

REACH SVHC :

No SVHC

Fall Time (Typ) :

17 ns

Current Rating :

79A

Drain to Source Breakdown Voltage :

150V

Voltage - Rated DC :

150V

Turn On Delay Time :

16 ns

Recovery Time :

105 ns

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

79A

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Series :

PowerTrench®

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Radiation Hardening :

No

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Element Configuration :

Single

Weight :

1.8g

Number of Terminations :

3

Power Dissipation :

310W

Published :

2013

Drain Current-Max (Abs) (ID) :

8A

Length :

10.67mm

Rise Time :

30ns

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

16m Ω @ 33A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

5870pF @ 25V

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-220-3

Gate Charge (Qg) (Max) @ Vgs :

107nC @ 10V

Power Dissipation-Max :

310W Tc

Number of Pins :

3

Resistance :

16mOhm

Packaging :

Tube

Vgs (Max) :

±20V